1N6774E3 [MICROSEMI]
Rectifier Diode, 1 Phase, 1 Element, 15A, Silicon, TO-257,;
| 型号： | 1N6774E3 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 15A, Silicon, TO-257, 快速恢复能力电源 超快恢复二极管 快速恢复二极管 局域网 超快速恢复能力电源 |
| 文件： | 总1页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
ULTRAFAST SILICON POWER RECTIFIER
Qualified per MIL-PRF-19500/ 646
Devices
Qualified Level
JAN
1N6774
1N6775
1N6776
1N6777
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Working Peak Reverse Voltage
1N6774 1N6775 1N6776 1N6777
Symbol
VRWM
IF
Unit
Vdc
50
100
150
200
TC = +100°C(1)
15
Adc
Apk
0C
Forward Current
Forward Current Surge Peak TP = 8.30C
180
IFSM
Operating & Storage Junction Temperature
-65 to +150
Top, T
stg
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
TO-257*
(2-PIN-ISOLATED)
Thermal Resistance, Junction-to-Case
2.0
0C/W
R
qJC
qJA
Thermal Resistance, Junction-to-Ambient
1) Derate at 300 mA/0C above TC = +1000C
40
0C/W
R
*See appendix A for
package
ELECTRICAL CHARACTERISTICS (TC = +250C Unless Otherwise Noted)
outline
Characteristics
Symbol
Min.
Max.
Unit
Forward Voltage
IF = 8.0 Adc, pulsed
IF = 15 Adc, pulsed
Reverse Current Leakage
VR = 0.8 of VRWM
VF
Vdc
1.00
1.15
IR
mAdc
10
Thermal Impedance
t
IM =15 mAdc; IH = 9.9 Adc; H = 200 ms; tMD = 35 ms; VH = 1
ZØJX
0C/W
Vdc
1.8
Breakdown Voltage
IR = 10 mAdc
1N6774
1N6775
1N6776
1N6777
50
Vdc
VBR
100
150
200
Junction Capacitance
CJ
trr
pF
VR = 5.0 Vdc, f = 1.0 MHz
Reverse Recovery Time
IF = 1.0 Adc; di/dt = 50 A/ms
300
35
hs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 1
相关型号：
1N6775PBF
Rectifier Diode, 1 Phase, 1 Element, 15A, Silicon, TO-257AA, HERMETIC SEALED, TO-257AA, 2 PIN
INFINEON
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