2731-100M [MICROSEMI]
100 Watts, 36 Volts, 200us, 10% Radar 2700-3100 MHz; 100瓦， 36伏特，为200us ， 10 ％雷达2700-3100兆赫
| 型号： | 2731-100M |
| 厂家： | 
Microsemi |
| 描述： | 100 Watts, 36 Volts, 200us, 10% Radar 2700-3100 MHz |
| 文件： | 总5页 (文件大小：299K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2731-100MR3
2731-100M
100 Watts, 36 Volts, 200µs, 10%
Radar 2700-3100 MHz
GENERAL DESCRIPTION
CASE OUTLINE
55KS-1
Common Base
The 2731-100M is an internally matched, COMMON BASE bipolar transistor
capable of providing 100 Watts of pulsed RF output power at 200µs pulse
width, 10% duty factor across the 2700 to 3100 MHz band. The transistor
prematch and test fixture has been optimized through the use of 10 Ohm TRL
Analysis. This ceramic sealed transistor is specifically designed for S-band
radar applications. It utilizes gold metallization and emitter ballasting to
provide high reliability and supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C1
575 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)
65 V
3.0 V
15.0 A
Emitter to Base Voltage (BVebo
Collector Current (Ic)
)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65 to +200 °C
+200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
MIN TYP MAX UNITS
Pout
Power Output
F=2700-3100 MHz
Pulse Width = 200 µs
Duty Factor = 10 %
Power Input = 16W
Vcc = +36V
100
8.0
40
115
8.5
140
9.4
W
dB
%
Pg
Power Gain
Collector Efficiency
Return Loss
ηc
Rl
-7
dB
dB
Pd
Pulse Droop
0.6
2:1
VSWR-T
Load Mismatch Tolerance
F = 2700, 2900, 3100 MHz
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo
BVces
hFE
θjc1
Emitter to Base Breakdown
Ie = 30 mA
3.0
65
V
V
Collector to Emitter Breakdown Ic = 120 mA
DC – Current Gain
Thermal Resistance
Vce = 5V, Ic = 600 mA
15
0.43
°C/W
Issue March 2006
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
2731-100MR3
2731-100M
Vcc = 36 Volts, Pulse Width = 200µs, Duty = 10 %
Pin vs. Pout
2.7GHz
2.8GHz
2.9GHz
3.0GHz
3.1GHz
140.0
120.0
100.0
80.0
60.0
40.0
20.0
0.0
0.0
5.0
10.0
15.0
20.0
25.0
Pin (Watts)
Efficiency vs. Frequency
55
50
45
40
35
30
2.65
2.7
2.75
2.8
2.85
2.9
2.95
3
3.05
3.1
3.15
Frequency (GHz)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
2731-100MR3
Gain vs. Frequency
9
8
7
6
5
4
3
2
1
0
2.6
2.7
2.8
2.9
3
3.1
3.2
Frequency (GHz)
Impedance curves will be added at the completion of the characterization.
Impedance
Data
Freq (GHz)
Zs
Zl
2.7
2.8
2.9
3.0
3.1
8.87-j12.64
8.24-j10.26
8.54-j8.06
9.85-j6.05
10.26-j4.88
4.33-j4.67
3.95-j4.94
3.47-j5.08
2.96-j5.06
2.48-j4.92
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
2731-100MR3
Circuit Component
Physical Circuit Dimension
Item
C1
C2
C3
C4
R1
R2
L1
Description
Value
Chip Cap A size 9.1pF
Chip Cap B size 10,000pF
Chip Cap B size 100pF
Electrolytic Cap 2200uF
Item
D1
D2
D3
D4
D5
D6
D7
D8
W (Mil)
35
318
58
500
124
530
770
200
48
L (Mil)
210
158
114
195
161
156
196
176
92
Chip resistor
Fix resistor
Silver ribbon
Copper wire
20 ohms
1.5 ohms
L=870 Mil, W=70 Mil.
21 AWG, 560 Mil
6006 @ 25Mil, Er=6.15, 1Oz Cu
L2
Material Roger-Duroid
D9
D10
D11
D12
272
35
35
119
150
200
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
2731-100MR3
2731-100M
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
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