2N1479 [MICROSEMI]
NPN SILICON MEDIUM POWER TRANSISTOR; NPN硅中功率晶体管
| 型号： | 2N1479 |
| 厂家： | 
Microsemi |
| 描述： | NPN SILICON MEDIUM POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN SILICON MEDIUM POWER TRANSISTOR
Qualified per MIL-PRF-19500/ 207
Devices
Qualified Level
2N1479
2N1480
2N1481
2N1482
MAXIMUM RATINGS
Ratings
2N1479 2N1480
Symbol 2N1481 2N1482 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
40
55
Vdc
Vdc
Vdc
Adc
Adc
W
VCEO
VCBO
VEBO
IC
60
100
12
1.5
1.0
1.0
Base-Current
Total Power Dissipation @ TA = 250C
IB
PT
Operating & Storage Junction Temperature Range
-65 to +200
0C
TJ, T
stg
TO-5*
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
0C/W
Thermal Resistance, Junction-to-Case
35
R
qJC
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 50 mAdc
40
55
Vdc
Vdc
2N1479, 2N1481
2N1480, 2N1482
V(BR)
CEO
Collector-Emitter Breakdown Voltage
VEB = 1.5 Vdc, IC = 0.25 mAdc
VEB = 1.5 Vdc, IC = 0.25 mAdc
Collector-Base Cutoff Current
VCB = 30 Vdc
VCB = 50 Vdc
Emitter-Base Cutoff Current
VEB = 12 Vdc
60
100
2N1479, 2N1481
2N1480, 2N1482
V(BR)
CEX
5.0
5.0
mAdc
mAdc
2N1479, 2N1481
2N1480, 2N1482
ICBO
10
IEBO
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N1479, 2N1480, 2N1481, 2N1482 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (1)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
20
35
60
100
IC = 200 mAdc, VCE = 4.0 Vdc
2N1479, 2N1480
2N1481, 2N1482
hFE
Collector-Emitter Saturation Voltage
IC = 200 mAdc, IB = 20 mAdc
IC = 200 mAdc, IB = 10 mAdc
Base-Emitter Voltage
IC = 200 mAdc, VCE = 4.0 Vdc
DYNAMIC CHARACTERISTICS
Forward Current Cutoff Frequency
IC = 5.0 mAdc, VCB = 28 Vdc
SWITCHING CHARACTERISTICS
Total Switching Time
0.75
0.75
Vdc
Vdc
2N1479, 2N1480
2N1481, 2N1482
VCE(sat)
1.5
25
VBE
fab
800
kHz
ton + toff
ms
VCC = 12 Vdc; RC = 59 W; IB0 = IB2 = 8.5 mAdc; IB1= 20 mAdc
(1) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
相关型号：
2N1479LEADFREE
Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
CENTRAL
©2020 ICPDF网 联系我们和版权申明