2N1488 [MICROSEMI]
NPN SILICON HIGH POWER TRANSISTOR; NPN硅大功率晶体管
| 型号： | 2N1488 |
| 厂家： | 
Microsemi |
| 描述： | NPN SILICON HIGH POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN SILICON HIGH POWER TRANSISTOR
Qualified per MIL-PRF-19500/ 208
Devices
Qualified Level
2N1487
2N1488
2N1489
2N1490
MAXIMUM RATINGS
Ratings
Symbol 2N1487 2N1488 Unit
2N1498 2N1490
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
40
60
60
55
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
VCEO
VCBO
VCEX
VEBO
IB
100
100
10
3.0
6.0
75
Collector Current
IC
Total Power Dissipation
@ TC = 250C (1)
PT
TO-33*
(TO-204AA)
Operating & Storage Junction Temperature Range
-65 to +200
0C
TJ, T
stg
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly @ 0.429 W/0C for TC > 250C
Symbol
Max.
2.33
Unit
0C/W
R
qJC
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
Symbol
Min.
Max.
Unit
Vdc
Vdc
Vdc
40
55
2N1487, 2N1489
2N1488, 2N1490
V(BR)
CEO
Collector-Emitter Breakdown Voltage
60
100
IC = 200 mAdc
2N1487, 2N1489
2N1488, 2N1490
V(BR)
CBO
Collector-Emitter Breakdown Voltage
IC = 0.5 mAdc, VEB = 1.5 Vdc
60
100
2N1487, 2N1489
2N1488, 2N1490
V(BR)
CEX
Collector-Base Cutoff Current
VCB = 30 Vdc
Emitter-Base Cutoff Current
VEB = 10 Vdc
25
25
ICBO
IEBO
mAdc
mAdc
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N1487, 2N1488, 2N1489, 2N1490 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (2)
Symbol
hFE
Min.
Max.
Unit
Forward-Current Transfer Ratio
15
25
45
75
IC = 1.5 Adc, VCE = 4.0 Vdc
2N1487, 2N1488
2N1489, 2N1490
Collector-Emitter Saturation Voltage
IC = 1.5 Adc, IB = 300 mAdc
IC = 1.5 Adc, IB = 100 mAdc
Base-Emitter Voltage
3.0
1.0
Vdc
Vdc
2N1487, 2N1488
2N1489, 2N1490
VCE(sat)
3.0
2.0
IC = 1.5 Adc, VCE = 4.0 Vdc
2N1487, 2N1488
2N1489, 2N1490
VBE(on)
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current
Transfer Ratio Cutoff Frequency
500
kc
½fhfb
½
IC = 100 mAdc, VCB = 12 Vdc
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
700
25
pF
Cobo
SWITCHING CHARACTERISTICS
Turn-On / Turn-Off Time
VCC = 12 Vdc; IB0 = IB2 = 150 mAdc; IB1 = 300 mAdc; RC = 7.8 W
(2) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
ton + toff
ms
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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