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2N1806 [MICROSEMI]

Silicon Controlled Rectifiers; 可控硅整流器器

2N1806


元器件型号：	2N1806
生产厂家：	MICROSEMI CORPORATION
描述和应用：	Silicon Controlled Rectifiers 可控硅整流器器栅极触发装置可控硅整流器
PDF文件：	总3页 (文件大小：162K)
下载文档：	下载PDF数据表文档文件
型号参数：2N1806参数

2N1806M

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-209AC

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0 IRF

2N1806M

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-209AC

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0 IRF

2N1807

Silicon Controlled Rectifiers

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6 MICROSEMI

2N1807

Silicon Controlled Rectifier

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23 ETC

2N1807

20 STERN ave.

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9 NJSEMI

2N1807

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 700V V(DRM), 700V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN

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0 MICROSEMI

2N1807E3

Silicon Controlled Rectifier, 110A I(T)RMS, 700V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN

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0 MICROSEMI

2N1807M

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 700V V(DRM), 700V V(RRM), 1 Element, TO-209AC

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0 IRF

2N1807M

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 700V V(DRM), 700V V(RRM), 1 Element, TO-209AC

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0 IRF

2N1808

alloy-junction germanium transistors

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11 ETC

2N1808

Silicon Controlled Rectifiers

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9 MICROSEMI

2N1808

alloy-junction germanium transistors

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7 ETC

2N1809

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 10A I(C) | STR-10

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19 ETC

2N1809

TRANSISTOR,BJT,NPN,50V V(BR)CEO,10A I(C),STR-10

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0 DIGITRON

2N1810

TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STF-1/2

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24 ETC

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