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2N1902E3 [MICROSEMI]

Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN;

2N1902E3


元器件型号：	2N1902E3
生产厂家：	MICROSEMI CORPORATION
描述和应用：	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN 晶体管
PDF文件：	总1页 (文件大小：70K)
下载文档：	下载PDF数据表文档文件
型号参数：2N1902E3参数

2N1903

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 10A I(C) | STR-1/4

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14 ETC

2N1904

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 10A I(C) | STR-1/4

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16 ETC

2N1905

TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 6A I(C) | TO-3

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12 ETC

2N1906

TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 6A I(C) | TO-3

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29 ETC

2N1907

TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 20A I(C) | TO-3

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18 ETC

2N1907

20A, 40V, PNP, Ge, POWER TRANSISTOR, TO-3

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1 TI

2N1908

TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 20A I(C) | TO-3

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20 ETC

2N1908

20A, 50V, PNP, Ge, POWER TRANSISTOR, TO-3

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0 TI

2N1909

Phase Control SCR 70 Amoeres Average(110 RMS) 600 Volts

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22 POWEREX

2N1909

High Power Silicon Controlled Rectifier 110 A RMS 25 to 1200 Volts

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10 NJSEMI

2N1909

Silicon Controlled Rectifiers

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8 MICROSEMI

2N1909

Thyristor SCR 25V 1.6KA 3-Pin TO-209AA

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0 NJSEMI

2N1909

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 25V V(DRM), 25V V(RRM), 1 Element

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0 POWEREX

2N1909E3

Silicon Controlled Rectifier, 110A I(T)RMS, 25V V(RRM), 1 Element, TO-209AA, TO-94, 2 PIN

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0 MICROSEMI

2N1909M

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 25V V(DRM), 25V V(RRM), 1 Element, TO-209AC

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0 IRF

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