2N2060 [MICROSEMI]
UNITIZED DUAL NPN SILICON TRANSISTOR; 规格化双NPN硅晶体管
| 型号： | 2N2060 |
| 厂家： | 
Microsemi |
| 描述： | UNITIZED DUAL NPN SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
UNITIZED DUAL NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 270
Devices
Qualified Level
JAN
JANTX
JANTXV
2N2060
2N2060L
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Symbol
VCEO
VCBO
VEBO
IC
2N2060
60
Unit
Vdc
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
100
Vdc
7.0
Vdc
500
mAdc
One
Both
Section Sections
Total Power Dissipation
@ TA = +250C (1)
@ TC = +250C (2)
540
1.5
600
2.12
mW
W
0C
PT
Operating & Storage Junction Temperature Range
-65 to +200
TJ, T
stg
1) Derate linearly 3.08 mW/0C for TA > 250C for one section, 3.48 mW/0C for both sections
TO-78*
2) Derate linearly 8.6 mW/0C for TC > 250C for one section, 12.1 mW/0C for both sections
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(3)
RBE £ 10 W, IC = 10 mAdc
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
80
60
Vdc
Vdc
V(BR)
CER
V(BR)
CEO
Collector-Base Cutoff Current
VCB = 100 Vdc
VCB = 80 Vdc
10
2.0
mAdc
hAdc
ICBO
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
VEB = 5.0 Vdc
mAdc
hAdc
10
2.0
IEBO
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N2060, 2N2060L JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 10 mAdc, VCE = 5.0 Vdc
IC = 100 mAdc, VCE = 5.0 Vdc
IC = 1.0 mAdc, VCE = 5.0 Vdc
IC = 10 mAdc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
IC = 50 mAdc, IB = 5.0 mAdc
Base-Emitter Saturation Voltage
IC = 50 mAdc, IB = 5.0 mAdc
25
30
40
50
75
90
120
150
hFE
0.3
0.9
Vdc
Vdc
VCE(sat)
VBE(sat)
DYNAMIC CHARACTERISTICS
Common Emitter Small-Signal Short-Circuit
Forward-Current Transfer ratio
3
25
½hfe½
IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz
Small-Signal Short-Circuit Input Impedance
IC = 1.0 mAdc, VCB = 5.0 Vdc, f = 1.0 kHz
Small-Signal Short-Circuit Forward-Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
Small-Signal Short-Circuit Input Impedance
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
Small-Signal Open-Circuit Output Admittance
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
Input Capacitance
20
50
30
150
4,000
16
W
hib
hfe
1,000
0
W
mmhos
pF
hie
hoe
85
Cibo
Cobo
VEB = 0.5 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
(3)Pulse Test: Pulse Width 250 to 350ms, Duty Cycle £ 2.0%.
15
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
相关型号：
2N2060ALEADFREE
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78
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