2N2222AWS-# [MICROSEMI]
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, DIE PACKAGE-3;
| 型号： | 2N2222AWS-# |
| 厂家： | 
Microsemi |
| 描述： | Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, DIE PACKAGE-3 晶体 开关 晶体管 |
| 文件： | 总2页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N2222A DIE
Phone: 617-924-9280
Fax: 617-924-1235
A Microsemi Company
580 Pleasant St.
Watertown, MA 02172
DIE SPECIFICATION
SWITCHING TRANSISTOR
NPN SILICON
FEATURES:
n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255
n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS
n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS
n LOW VCE(sat): .3V @ IC = 150 mAdc
PHYSICAL DIMENSIONS
Absolute Maximum Ratings:
Symbol Parameter
Limit
Unit
Vceo
Vcbo
Vebo
Ic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
50
75
6.0
800
Vdc
Vdc
Vdc
mAdc
Collector Current- Continuous
Tj, Tstg Operating Junction & Storage
Temperature Range
-65 to +200 °C
Packaging Options:
Processing Options:
W: Wafer (100% probed) U: Wafer (sample probed)
Standard: Capable of JANTXV applications (No Suffix)
Suffix C: Commercial
D: Chip (Waffle Pack)
B: Chip (Vial)
V: Chip (Waffle Pack, 100% visually inspected) X: Other Suffix S: Capable of S-Level equivalent applications
ORDERING INFORMATION:
PART #: 2N2222A_ _ - _
Metallization Options:
Standard: Al Top
/ Au Backside (No Dash #)
/ TiPdAg Backside
First Suffix Letter: Packaging Option
Second Suffix Letter: Processing Option
Dash #: Metallization Option
Dash 1:
Al Top
Sertech reserves the right to make changes to any product design, specification, or other information at any time without
prior notice.
Data Sheet, Die, 2N2222A MSW Rev. - 4/15/98
1
MSC0949.PDF
Electrical Characteristics @ Tj = 25 °C
Symbol
Parameter
Conditions
Min Max Unit
OFF CHARACTERISTICS
V(BR)CBO Breakdown Voltage, Collector to Base
V(BR)EBO Breakdown Voltage, Emitter to Base
V(BR)CEO Breakdown Voltage, Collector to Emitter
Bias Cond. D, IC=10uAdc
Bias Cond. D, IE=10uAdc
Bias Cond. D, IC= 10mAdc, pulsed
Bias Cond. D, VCE=50Vdc
Bias Cond. D, VCB=60Vdc
Bias Cond. D, VEB= 4Vdc
75
6
50
Vdc
Vdc
Vdc
ICES
Collector to Emitter Cutoff Current
Collector to Base Cutoff Current
Emitter to Base Cutoff Current
50 nAdc
10 nAdc
10 nAdc
ICBO1
IEBO
ON CHARACTERISTICS
hFE1
hFE2
hFE3
hFE4
hFE5
Forward-Current Transfer Ratio
VCE=10Vdc, IC=0.1mAdc
VCE=10Vdc, IC=1.0mAdc
VCE=10Vdc, IC=10mAdc
VCE=10Vdc, IC=150mAdc, pulsed
VCE=10Vdc, IC=500mAdc, pulsed
IC=150mAdc, IB=15mAdc, pulsed
IC=500mAdc, IB=50mAdc, pulsed
IC=150mAdc, IB=15mAdc, pulsed
IC=500mAdc, IB=50mAdc, pulsed
50
75 325
100
100 300
30
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
VCE(sat)1 Collector to Emitter Saturation Voltage
VCE(sat)2 Collector to Emitter Saturation Voltage
VBE(sat)1
VBE(sat)2
0.3 Vdc
1 Vdc
0.6 1.2 Vdc
2 Vdc
Base to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
hfe
Short Circuit Forward Current Xfer Ratio
VCE= 10Vdc,IC =1mAdc, f= 1kHz
50
/hfe/
Magnitude of Short Circuit Forward
Current Transfer Ratio
Output Capacitance
VCE= 20Vdc,IC =50mAdc, f=100MHz
2.5
Cobo
Cibo
VCB= 10Vdc, IE =0, 100kHz< f <1MHz
VEB= 2.0Vdc, IC=0, 100kHz< f <1MHz
8 pF
25 pF
Input Capacitance
SWITCHING CHARACTERISTICS
ton
toff
Saturated Turn-on Time
Saturated Turn-off Time
As defined in 19500/255 Figure 8
As defined in 19500/255 Figure 9
45 nS
300 nS
2
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