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2N2325A [MICROSEMI]

SCRs 1.6 Amp, Planear; 可控硅1.6安培，平面变

2N2325A


元器件型号：	2N2325A
生产厂家：	MICROSEMI CORPORATION
描述和应用：	SCRs 1.6 Amp, Planear 可控硅1.6安培，平面变触发装置可控硅整流器
PDF文件：	总3页 (文件大小：164K)
下载文档：	下载PDF数据表文档文件
型号参数：2N2325A参数

2N2325AN

Silicon Controlled Rectifier, 150V V(DRM), 1 Element, TO-39, TO-39, 3 PIN

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0 MICROSEMI

2N2325AN

Silicon Controlled Rectifier, 150V V(DRM), 1 Element, TO-39, TO-39, 3 PIN

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0 MICROSEMI

2N2325AS

Thyristor Switches

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8 MICROSEMI

2N2325LEADFREE

Silicon Controlled Rectifier, 1.6A I(T)RMS, 150V V(DRM), 150V V(RRM), 1 Element, TO-39, HERMETIC SEALED PACKAGE-3

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0 CENTRAL

2N2325N

Silicon Controlled Rectifier, 1 Element, TO-39, TO-39, 3 PIN

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0 MICROSEMI

2N2325S

Thyristor Switches

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5 MICROSEMI

2N2326

SCRs 1.6 Amp, Planear

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28 MICROSEMI

2N2326

Bipolar NPNP Device in a Hermetically sealed TO39

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26 SEME-LAB

2N2326

SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS

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26 CENTRAL

2N2326

SCR, V(DRM) = 200 V TO 299.9 V

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7 NJSEMI

2N2326

SILICON THYRISTORS

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15 COMSET

2N2326

SILICON CONTROLLED RECTIFIER

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1 MICROSEMI

2N2326

Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 200V V(DRM), 1 Element, TO-39, TO-39, 3 PIN

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0 ASI

2N2326

Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-39, HERMETIC SEALED PACKAGE-3

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0 CENTRAL

2N2326

Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 200; Max TMS Bridge Input Voltage: 1; Max DC Reverse Voltage: 0.1; Capacitance: 0.15; Package: TO-39

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1 DIGITRON

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