2N2326ASE3 [MICROSEMI]
Silicon Controlled Rectifier, 0.3454A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-5, TO-5, 3 PIN;
| 型号： | 2N2326ASE3 |
| 厂家： | 
Microsemi |
| 描述： | Silicon Controlled Rectifier, 0.3454A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-5, TO-5, 3 PIN |
| 文件： | 总2页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
SILICON CONTROLLED RECTIFIER
Qualified per MIL-PRF-19500/ 276
Devices
Qualified
Level
2N2323
2N2323S
2N2323A
2N2324
2N2324S
2N2324A
2N2326
2N2326S
2N2326A
2N2328
2N2328S
2N2328A
JAN
JANTX
JANTXV
2N2329
2N2329S
2N2323AS 2N2324AS 2N2326AS 2N2328AS
MAXIMUM RATINGS
2N2323,S/ 2N2324,S/ 2N2326,S/ 2N2328,S/
2N2323A,S 2N2324A,S 2N2326A,S 2N2328A,S
Ratings
Reverse Voltage
Sym
2N2329,S Unit
VRM
50
100
200
300
400
500
Vdc
Vpk
Vpk
Adc
Adc
Vpk
0C
Working Peak Reverse Voltage VRM
75
150
300
400
Forward Blocking Voltage
VFBXM
IO
50(3/4)
100(3/4)
200(3/4)
0.22
300(3/4)
400(3)
Average Forward Current (1)
Forward Current Surge Peak(2) IFSM
15
6
Cathode-Gate Current
Operating Temperature
Storage Junction Temp
VKGM
Top
Tstg
-65 to +125
-65 to +150
0C
1) This average forward current is for an ambient temperature of 800C and 180 electrical degrees of
conduction.
2) Surge current is non-recurrent. The rate of rise of peak surge current shall not exceed 40 A during
the first 5 ms after switching from the ‘off’ (blocking) to the ‘on’ (conducting) state. This is measured
from the point where the thyristor voltage has decayed to 90% of its initial blocking value.
3) Gate connected to cathode through 1,000 ohm resistor.
TO-5
4) Gate connected to cathode through 2,000 ohm resistor.
*See appendix A
for package outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
SUBGROUP 2 TESTING
Reverse Blocking Current
R2 = 1 km
2N2323 thru 2N2329
2N2323S thru 2N2329S
2N2323A thru 2N2328A
2N2323AS thru 2N2328AS
2N2323, S, A, AS
2N2324, S, A, AS
2N2326, S, A, AS
2N2328, S, A, AS
2N2329, S,
R2 = 2 km
10
mAdc
IRBX1
VR = 50 Vdc
VR = 100 Vdc
VR = 200 Vdc
VR = 300 Vdc
VR = 400 Vdc
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N2323, A, AS, S; 2N2324, A, AS, S; 2N2326, A, AS, S; 2N2328, A, AS, S; 2N232, S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
Forward Blocking Current
R2 = 1 kW
2N2323 thru 2N2329
2N2323S thru 2N2329S
2N2323A thru 2N2328A
2N2323AS thru 2N2328AS
2N2323, S, A, AS
R2 = 2 kW
IFBX1
10
mAdc
VR = 50 Vdc
VR = 100 Vdc
2N2324, S, A, AS
VR = 200 Vdc
2N2326, S, A, AS
VR = 300 Vdc
2N2328, S, A, AS
VR = 400 Vdc
2N2329, S
Reverse Gate Current
VKG = 6 Vdc
IKG
200
mAdc
Gate Trigger Voltage and Current
V2 = VFBX = 6 Vdc; RL = 100 W
Re = 1 kW
Vdc
mAdc
Vdc
2N2323 thru 2N2329 and
2N2323S thru 2N2329S
2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
VGT1
IGT1
VGT1
IGT1
0.35
0.35
0.80
200
0.60
20
Re = 2 kW
mAdc
SUBGROUP 4 TESTING
Exponential Rate of Voltage Rise TA = 1250C
50 W £ RL £ 400 W, C = 0.1 to 1.0 mF, repetition rate = 60 pps,
test duration = 15 seconds
dv/dt = 1.8 v/ms, R3 = 1 kW
2N2323 thru 2N2329 and
2N2323S thru 2N2329S
Vdc
dv/dt = 0.7 v/ms, R3 = 2 kW
2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
VFBX
VAA = 50 Vdc
VAA = 100 Vdc
VAA = 200 Vdc
VAA = 300 Vdc
VAA = 400 Vdc
Forward “on” Voltage
2N2323, S, A, AS
2N2324, S, A, AS
2N2326, S, A, AS
2N2328, S, A, AS
2N2329, S
47
95
190
285
380
VFM
2.2
2.0
V(pk)
mAdc
iFM = 4a (pk) (pulse), pulse width = 8.5 ms, max; duty cycle = 2% max
Holding Current
VAA = 24 Vdc max, IF1 = 100 mAdc, IF2 = 10 mAdc
Gate trigger source voltage = 6 Vdc,
trigger pulse width = 25 ms min., R2 = 330 W
IHOX
R3 = 1 kW
2N2323 thru 2N2329 and
2N2323S thru 2N2329S
R3 = 2 kW
2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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