2N3026E3 [MICROSEMI]

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,;
2N3026E3
型号: 2N3026E3
厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述:

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,

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文件: 总1页 (文件大小:84K)
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2N3027

SCRs 0.5 Amp, Planar

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6 ETC

2N3027

SCRs 0.5 Amp, Planear

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20 MICROSEMI

2N3027

SILICON PNPN PASSIVATED PLANAR CONTROLLED SWITCH

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8 NJSEMI

2N3027

SCRs 0.5 Amp, Planar

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7 ETC

2N3027

Silicon Controlled Rectifier, 1.3A I(T)RMS, 500mA I(T), 30V V(DRM), 30V V(RRM), 1 Element, TO-5, TO-5, 3 PIN

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0 SSDI

2N3027

Thyristor SCR 30V 8A 3-Pin TO-18

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0 NJSEMI

2N3027E3

Silicon Controlled Rectifier, 0.785A I(T)RMS, 30V V(DRM), 30V V(RRM), 1 Element, TO-18

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0 MICROSEMI

2N3028

SCRs 0.5 Amp, Planear

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15 MICROSEMI

2N3028

Thyristor SCR 60V 8A 3-Pin TO-18

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0 NJSEMI

2N3028A

Thyristor SCR 60V 8A 3-Pin TO-18

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0 NJSEMI

2N3028E3

Silicon Controlled Rectifier, 0.785A I(T)RMS, 60V V(DRM), 60V V(RRM), 1 Element, TO-18

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0 MICROSEMI

2N3029

SCRs 0.5 Amp, Planear

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19 MICROSEMI

2N3029

Silicon Controlled Rectifier, 1A I(T)RMS, 500mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-5, TO-5, 3 PIN

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0 SSDI

2N3029

Silicon Controlled Rectifier, 0.785A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-18

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0 MICROSEMI

2N3029B

Thyristor SCR 100V 8A 3-Pin TO-18

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0 NJSEMI