2N3501E3 [MICROSEMI]

Small Signal Bipolar Transistor, 0.3A I(C), NPN;
2N3501E3
元器件型号: 2N3501E3
生产厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述和应用:

Small Signal Bipolar Transistor, 0.3A I(C), NPN

PDF文件: 总7页 (文件大小:723K)
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型号参数:2N3501E3参数

2N3501L

Type 2N3501L Geometry 5620 Polarity NPN

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23 SEMICOA

2N3501L

Chip Type 2C3501 Geometry 5620 Polarity NPN

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20 SEMICOA

2N3501L

NPN SILICON TRANSISTOR

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27 MICROSEMI

2N3501L

NPN SILICON TRANSISTOR

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19 MICROSEMI

2N3501L

Bipolar NPN Device in a Hermetically sealed TO5

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4 SEME-LAB

2N3501L

RADIATION HARDENED

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18 MICROSEMI

2N3501L

Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN

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0 MCC

2N3501L-BP

Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN

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0 MCC

2N3501LEADFREE

Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN

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0 CENTRAL

2N3501LEADFREE

Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN

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0 CENTRAL

2N3501TV

TRANSISTOR | BJT | NPN | 115V V(BR)CEO | 50MA I(C) | TO-39

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14 ETC

2N3501UB

Silicon NPN Transistor

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44 SEMICOA

2N3501UB

RADIATION HARDENED

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38 MICROSEMI

2N3502

Medium Current General Purpose Amplifiers and Switches

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25 RAYTHEON

2N3502

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

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29 SEME-LAB