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元器件品牌
2N3501E3
[MICROSEMI]
Small Signal Bipolar Transistor, 0.3A I(C), NPN;
元器件型号:
2N3501E3
生产厂家:
MICROSEMI CORPORATION
描述和应用:
Small Signal Bipolar Transistor, 0.3A I(C), NPN
PDF文件:
总7页 (文件大小:723K)
下载文档:
下载PDF数据表文档文件
型号参数:2N3501E3参数
查看货源
2N3501L
Type 2N3501L Geometry 5620 Polarity NPN
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SEMICOA
2N3501L
Chip Type 2C3501 Geometry 5620 Polarity NPN
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156
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20
SEMICOA
2N3501L
NPN SILICON TRANSISTOR
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27
MICROSEMI
2N3501L
NPN SILICON TRANSISTOR
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19
MICROSEMI
2N3501L
Bipolar NPN Device in a Hermetically sealed TO5
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156
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4
SEME-LAB
2N3501L
RADIATION HARDENED
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18
MICROSEMI
2N3501L
Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
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0
MCC
2N3501L-BP
Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
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0
MCC
2N3501LEADFREE
Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
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0
CENTRAL
2N3501LEADFREE
Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
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156
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0
CENTRAL
2N3501TV
TRANSISTOR | BJT | NPN | 115V V(BR)CEO | 50MA I(C) | TO-39
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14
ETC
2N3501UB
Silicon NPN Transistor
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156
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44
SEMICOA
2N3501UB
RADIATION HARDENED
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156
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38
MICROSEMI
2N3502
Medium Current General Purpose Amplifiers and Switches
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156
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25
RAYTHEON
2N3502
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
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29
SEME-LAB
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