2N5339U3E3 [MICROSEMI]
Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, SMD5, 3 PIN;
| 型号： | 2N5339U3E3 |
| 厂家： | 
Microsemi |
| 描述： | Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, SMD5, 3 PIN |
| 文件： | 总4页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/560
DEVICES
LEVELS
JAN
2N5339
2N5339U3
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Symbol
Value
Unit
VCEO
VCBO
VEBO
IB
100
100
6.0
1.0
5.0
Vdc
Vdc
Vdc
Adc
Adc
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
IC
@ TA = +25°C (1)
@ TC = +25°C (2)
1.0
17.5
75
Total Power Dissipation
PT
W
TO-39
(TO-205AD)
@ TC = +25°C (3) – U3
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to Air
NOTES:
Top , Tstg
RθJA
-65 to +200
175
°C
°C/W
1) Derate linearly 5.71mW/°C for TA > 25°C
2) Derate linearly 100mW/°C for TC > 25°C
3) Derate linearly 434mW/°C for TC > 25°C – U3
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
IC = 50mAdc
V(BR)CEO
100
Vdc
U-3
(TO-276AA)
Collector-Emitter Cutoff Current
ICEO
100
1.0
µAdc
µAdc
µAdc
µAdc
V
CE = 100Vdc
Collector-Emitter Cutoff Current
ICEX
V
CE = 90Vdc, VBE = 1.5Vdc
Collector-Base Cutoff Current
ICBO
1.0
V
CB = 100Vdc
Emitter-Base Cutoff Current
VEB = 6.0Vdc
IEBO
100
T4-LDS-0011 Rev. 3 (101764)
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
ON CHARACTERISTICS (3)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 0.5Adc, VCE = 2.0Vdc
IC = 2.0Adc, VCE = 2.0Vdc
IC = 5.0Adc, VCE = 2.0Vdc
60
60
40
hFE
240
Collector-Emitter Saturation Voltage
IC = 2.0Adc, IB = 0.2Adc
IC = 5.0Adc, IB = 0.5Adc
VCE(sat)
0.7
1.2
Vdc
Vdc
Base-Emitter Saturation Voltage
IC = 2.0Adc, IB = 0.2Adc
IC = 5.0Adc, IB = 0.5Adc
VBE(sat)
1.2
1.8
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
|hfe|
3.0
15
IC = 0.5Adc, VCE = 10Vdc, f = 10MHz
Output Capacitance
Cobo
250
pF
pF
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Input Capacitance
VBE = 2.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
Cibo
1,000
SAFE OPERATING AREA
DC Tests
TC = +25°C, 1 Cycle, t ≥ 0.5s
Test 1
V
CE = 2.0Vdc, IC = 5.0Adc
Test 2
V
CE = 5.0Vdc, IC = 2.0Adc
Test 3
V
CE = 90Vdc, IC = 55mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%
T4-LDS-0011 Rev. 3 (101764)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Dimensions
Inches Millimeters
Symbol
Note
5
Min Max
.305 .355
.240 .260
.335 .370
.200 TP
Min
7.75
6.10
8.51
Max
9.02
6.60
9.40
CD
CH
HD
LC
LD
LL
LU
L1
3
6
7
7
7
7
5.08 TP
.016 .021
0.41
0.53
.500 .750 12.70 19.05
.016 .019
.050
0.41
0.48
1.27
L2
.250
6.35
0.74
0.71
2.54
7
3
10
5
TL
TW
P
.029 .045
.028 .034
.100
1.14
0.86
Q
r
α
Notes
.050
.010
45° TP
1, 2, 8, 9
1.27
0.25
45° TP
1, 2, 8, 9
4
10, 11
6
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Symbol TL is measured from HD maximum.
4. Details of outline in this zone are optional.
5. Symbol CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane shall be
within .007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be measured by direct methods or by
gauge.
7. Symbol LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum.
8. Lead designation, depending on device type, shall be as follows:
Lead number
TO-39
1
2
3
Emitter
Base
Collector
9. Lead number three is electrically connected to case.
10. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
11. Symbol r applied to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions (TO-39)
T4-LDS-0011 Rev. 3 (101764)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to φx
symbology.
Dimensions
Ltr
Inches
Min
Millimeters
Min Max
10.03 10.29
7.40
2.76
0.25
7.14
2.29
5.59
2.92
Max
.405
.301
.1205
.020
.291
.100
.230
.125
BL
BW
CH
LH
LW1
LW2
LL1
LL2
LS1
LS2
Q1
.395
.291
.1085
.010
.281
.090
.220
.115
7.65
3.06
0.51
7.39
2.54
5.84
3.18
4. Terminal 1 - collector, terminal 2 -base, terminal 3 - emitter.
.150 BSC
.075 BSC
.030
.030
3.81 BSC
1.91 BSC
0.762
0.762
Q2
FIGURE 2. Physical dimensions and configuration (U3) (SMD 5) (TO-276AA)
T4-LDS-0011 Rev. 3 (101764)
Page 4 of 4
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