2N5581E3 [MICROSEMI]

Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-46,;
2N5581E3
元器件型号: 2N5581E3
生产厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述和应用:

Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-46,

晶体管
PDF文件: 总2页 (文件大小:52K)
下载文档:  下载PDF数据表文档文件
型号参数:2N5581E3参数

2N5582

NPN SILICON SWITCHING TRANSISTOR

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14 MICROSEMI

2N5582

Silicon NPN Transistor

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10 SEMICOA

2N5582

Small Signal Transistors

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28 CENTRAL

2N5582

Chip Type 2C2222A Geometry 0400 Polarity NPN

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21 SEMICOA

2N5582

Small Signal Transistors

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7 CENTRAL

2N5582

SSI NPN POWER BJT

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8 NJSEMI

2N5582_02

Silicon NPN Transistor

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10 SEMICOA

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105 ETC

2N5583

Bipolar PNP Device in a Hermetically sealed TO39 Metal Package.

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25 SEME-LAB

2N5583

Bipolar PNP Device in a Hermetically sealed TO39 Metal Package.

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75 SEME-LAB

2N5583

PNP SILICON HIGH FREQUENCY TRANSISTOR

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43 NJSEMI

2N5583LP

TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-39

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35 ETC

2N5584

TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 30A I(C) | TO-210AE

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26 ETC

2N5584

Power Bipolar Transistor, 30A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN

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0 MICROSEMI

2N5584E3

Power Bipolar Transistor, 30A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN

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0 MICROSEMI