2N5582E3 [MICROSEMI]
Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-46,;
| 型号： | 2N5582E3 |
| 厂家： | 
Microsemi |
| 描述： | Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-46, 晶体管 |
| 文件： | 总2页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/ 423
Devices
Qualified Level
JAN
2N5581
2N5582
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Value
50
Unit
Vdc
Vdc
Vdc
mAdc
W
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
VCEO
VCBO
VEBO
IC
75
6.0
800
Total Power Dissipation
@ TA = 250C (1)
@ TC = 250C (2)
0.5
2.0
PT
W
0C
TO-46*
(TO-206AB)
Operating & Storage Junction Temperature Range
-55 to +200
Top, T
stg
1) Derate linearly 2.86 mW/0C for TA > 250C
2) Derate linearly 11.43 mW/0C for TC > 250C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
50
Vdc
V(BR)
CEO
Collector-Base Cutoff Current
VCB = 60 Vdc
VCB = 75 Vdc
ICBO
hAdc
mAdc
10
10
Emitter-Base Cutoff Current
VEB = 4.0Vdc
VEB = 6.0Vdc
IEBO
hAdc
mAdc
10
10
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N5581, 2N5582 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
IC =1.0 m Adc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
2N5581
30
35
40
40
20
hFE
120
300
IC = 0.1 mAdc, VCE = 10 Vdc
IC =1.0 m Adc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
Base-Emitter Voltage
2N5582
50
75
100
100
30
hFE
0.3
1.0
Vdc
Vdc
VCE(sat)
1.2
2.0
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
0.6
VBE(sat)
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 10 Vdc
30
50
2N5581
2N5582
hfe
Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz £ f £ 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 150 mAdc; IB1= 15 mAdc
Turn-Off Time
2.5
8.0
25
½hfe½
Cobo
pF
pF
Cibo
ton
hs
hs
35
toff
300
VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc
(3) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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