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2N5659E3 [MICROSEMI]

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 Pin, TO-111, 3 PIN;

2N5659E3


元器件型号：	2N5659E3
生产厂家：	MICROSEMI CORPORATION
描述和应用：	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 Pin, TO-111, 3 PIN 晶体管
PDF文件：	总1页 (文件大小：69K)
下载文档：	下载PDF数据表文档文件
型号参数：2N5659E3参数

2N5660

Silicon NPN Transistor

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16 SEMICOA

2N5660

NPN POWER SILICON TRANSISTOR

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3 MICROSEMI

2N5660

NPN POWER SILICON TRANSISTOR

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11 MICROSEMI

2N5660

Silicon NPN Power Transistors

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7 SAVANTIC

2N5660

Silicon NPN Power Transistors

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6 ISC

2N5660

NPN POWER SILICON TRANSISTOR

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12 MICROSEMI

2N5660

Bipolar NPN Device in a Hermetically sealed TO66

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5 SEME-LAB

2N5660

Silicon NPN Power Transistors

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5 ISC

2N5660

NPN SWITCHING TRANSISTORS

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6 NJSEMI

2N5660

NPN POWER SILICON TRANSISTOR

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8 MICROSEMI

2N5660

SILICON PLANAR NPN POWER TRANSISTORS

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6 NJSEMI

2N5660

0.5 AMP SWITCHING

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12 NJSEMI

2N5660E3

Power Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin,

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0 MICROSEMI

2N5661

0.5 AMP SWITCHING

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12 NJSEMI

2N5661

Bipolar NPN Device in a Hermetically sealed TO66

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5 SEME-LAB

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