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2N6063E3 [MICROSEMI]

Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN;

2N6063E3


元器件型号：	2N6063E3
生产厂家：	MICROSEMI CORPORATION
描述和应用：	Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN 晶体管
PDF文件：	总1页 (文件大小：80K)
下载文档：	下载PDF数据表文档文件
型号参数：2N6063E3参数

2N6067

TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 100MA I(C) | TO-92

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41 ETC

2N6068

TRIAC|25V V(DRM)|4A I(T)RMS|TO-126

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22 ETC

2N6068

PEEK GATE TRIGGER CURRENT

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12 NJSEMI

2N6068A

PEEK GATE TRIGGER CURRENT

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12 NJSEMI

2N6068A

TRIAC|25V V(DRM)|2A I(T)RMS|TO-126VAR

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24 ETC

2N6068AHR-PBF

TRIAC

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0 DIGITRON

2N6068B

SENSITIVE GATE TRIACS

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0 DIGITRON

2N6068BHR-PBF

TRIAC

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0 DIGITRON

2N6068HR-PBF

TRIAC

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0 DIGITRON

2N6069

TRIAC|50V V(DRM)|4A I(T)RMS|TO-126

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27 ETC

2N6069

PEEK GATE TRIGGER CURRENT

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19 NJSEMI

2N6069A

PEEK GATE TRIGGER CURRENT

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19 NJSEMI

2N6069A

TRIAC|50V V(DRM)|2A I(T)RMS|TO-126

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24 ETC

2N6069B

SENSITIVE GATE TRIACS

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0 DIGITRON

2N6070

TRIAC|100V V(DRM)|4A I(T)RMS|TO-126

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31 ETC

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