Toggle navigation
首页
加载中...
马上查询
×
马上查询
关闭背景特效
首页
|
元器件品牌
2N6580E3
[MICROSEMI]
Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2;
元器件型号：
2N6580E3
生产厂家：
MICROSEMI CORPORATION
描述和应用：
Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2
局域网 晶体管
PDF文件：
总1页 (文件大小：70K)
下载文档：
下载PDF数据表文档文件
型号参数：2N6580E3参数
查看货源
2N6581
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
22
SEME-LAB
2N6581
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
12
SEME-LAB
2N6582
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
34
ETC
2N6582
Power Bipolar Transistor, 10A I(C), 350V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MICROSEMI
2N6583
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
17
SEME-LAB
2N6583
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
13
SEME-LAB
2N6583E3
Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MICROSEMI
2N6584
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 10A I(C) | TO-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
17
ETC
2N6584
Power Bipolar Transistor, 10A I(C), 350V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MICROSEMI
2N6584E3
Power Bipolar Transistor, 10A I(C), 350V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MICROSEMI
2N6585
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-210AC
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
16
ETC
2N6585
Power Bipolar Transistor, 7A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, ISOLATED TO-61, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
VISHAY
2N6586
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-210AC
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
25
ETC
2N6586
Power Bipolar Transistor, 7A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, ISOLATED TO-61, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
VISHAY
2N6586E3
Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MICROSEMI
©2020 ICPDF网
联系我们和版权申明
MICROSEMI CORPORATION 
