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元器件品牌
2N6798
[MICROSEMI]
N-CHANNEL MOSFET; N沟道MOSFET
元器件型号：
2N6798
生产厂家：
MICROSEMI CORPORATION
描述和应用：
N-CHANNEL MOSFET
N沟道MOSFET
晶体 小信号场效应晶体管 开关 脉冲
PDF文件：
总3页 (文件大小：159K)
下载文档：
下载PDF数据表文档文件
型号参数：2N6798参数
查看货源
2N6798_10
N-CHANNEL MOSFET
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15
MICROSEMI
2N6798E
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
Warning
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2
IRF
2N6798EA
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
Warning
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156
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1
IRF
2N6798EB
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
Warning
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156
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2
IRF
2N6798EBPBF
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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156
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0
IRF
2N6798ED
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
Warning
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156
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0
IRF
2N6798SCC5205/019
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
Warning
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156
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1
IRF
2N6798TX
5.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
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156
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0
RENESAS
2N6798TXV
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Warning
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156
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1
FAIRCHILD
2N6798TXV
5.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
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156
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0
RENESAS
2N6798U
N-CHANNEL MOSFET
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156
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43
MICROSEMI
2N6798U
N-Channel
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156
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57
ETC
2N6799
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3A I(D) | TO-39
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156
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12
ETC
2N6799
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Warning
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on line
156
-
0
INFINEON
2N6800
100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor
Warning
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29
ETC
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