2N6802U [MICROSEMI]

N-CHANNEL MOSFET; N沟道MOSFET
2N6802U
元器件型号: 2N6802U
生产厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述和应用:

N-CHANNEL MOSFET
N沟道MOSFET

晶体 小信号场效应晶体管
PDF文件: 总4页 (文件大小:176K)
下载文档:  下载PDF数据表文档文件
型号参数:2N6802U参数

2N6804

P-CHANNEL MOSFET

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307 MICROSEMI

2N6804

-100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package

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482 ETC

2N6804_12

This 2N6804 switching transistor is military qualified up to the JANTXV level for high-reliability applications.

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77 MAS

2N6804E3

Power Field-Effect Transistor, 11A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, ROHS COMPLIANT, METAL CAN, TO-3, 2 PIN

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1 MICROSEMI

2N6804PBF

Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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1 IRF

2N6804SCC5206/004

Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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0 IRF

2N6804SCC5206/004PBF

Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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2 IRF

2N6806

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 6.5A I(D) | TO-204AA

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44 ETC

2N6806SCC5206/004

Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,

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0 IRF

2N6806SCC5206/004PBF

Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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0 IRF

2N681

25 and 35 Amp RMS SCRs

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37 KNOX

2N681

25 and 35 Amp RMS SCRs

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63 IRF

2N681

25 AND 35 AMP RMS SCRS

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17 IRF

2N681

SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS

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17 CENTRAL

2N681

SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS

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9 CENTRAL