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元器件品牌
2N6835E3
[MICROSEMI]
Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2;
元器件型号：
2N6835E3
生产厂家：
MICROSEMI CORPORATION
描述和应用：
Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2
局域网 晶体管
PDF文件：
总1页 (文件大小：80K)
下载文档：
下载PDF数据表文档文件
型号参数：2N6835E3参数
查看货源
2N6836
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 15A I(C) | TO-204AC
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156
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71
ETC
2N6836
Silicon NPN Power Transistors
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156
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10
SAVANTIC
2N6836
Silicon NPN Power Transistors
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21
ISC
2N6836
15A, 450V, NPN, Si, POWER TRANSISTOR, TO-204AA, METAL, TO-3, 2 PIN
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2
ONSEMI
2N6836E3
Power Bipolar Transistor, 15A I(C), 450V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2
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156
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0
MICROSEMI
2N6837
isc Silicon NPN Power Transistor
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156
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16
ISC
2N6837
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 20A I(C) | TO-204AE
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33
ETC
2N6838
TRANSISTOR | BJT | NPN | 30MA I(C) | SOT-173
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34
ETC
2N6839
TRANSISTOR | BJT | NPN | 50MA I(C) | SOT-173
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156
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19
ETC
2N683A
SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS
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11
CENTRAL
2N683A
SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS
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14
CENTRAL
2N683A
SCR, V(DRM) = 100V to 199.9V
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6
NJSEMI
2N683M
Silicon Controlled Rectifier, 25A I(T)RMS, 16000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-208AA
Warning
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156
-
0
IRF
2N683MPBF
Silicon Controlled Rectifier, 25A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-208AA
Warning
: Undefined variable $rtag in
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156
-
0
VISHAY
2N683PBF
Silicon Controlled Rectifier, 25A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-208AA
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
IRF
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