2N696SE3 [MICROSEMI]
Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN;
| 型号： | 2N696SE3 |
| 厂家： | 
Microsemi |
| 描述： | Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN |
| 文件： | 总3页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/ 99
Devices
Qualified Level
2N696
2N696S
2N697
2N697S
JAN
MAXIMUM RATINGS
Ratings
Collector-Base Voltage
Symbol
VCBO
Value
60
Units
Vdc
Emitter-Base Voltage
5.0
Vdc
VEBO
Total Power Dissipation @ TA = 250C (1)
@ TC = 250C (2)
0.6
2.0
W
W
0C
PT
Operating & Storage Junction Temperature Range
-65 to +200
TJ, T
stg
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
0C/mW
TO-5*
Thermal Resistance, Junction-to-Case
0.075
R
qJC
1) Derate linearly 4.0 mW/0C for TA > 250C
2) Derate linearly 13.3 mW/0C for TC > 250C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
RBE = 10 W, IC = 100 mAdc
Collector-Base Cutoff Current
VCB = 100 Vdc
Symbol
Min.
Max.
Unit
Vdc
V(BR)
CER
40
ICBO
mAdc
mAdc
10
0.1
VCB = 30 Vdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 150 mAdc, VCE = 10 Vdc
IEBO
10
2N696,s
2N697,s
2N696,s
2N697,s
60
120
20
40
12.5
20.0
hFE
IC = 500 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
Vdc
Vdc
VCE(sat)
VBE(sat)
0.3
1.5
1.3
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N696, 2N696s, 2N697, 2N697s SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward-Current Transfer Ratio
½hfe½
IC = 50 mAdc, VCE = 10 Vdc; f = 20 MHz
2N696,s
2N697,s
2.5
3.0
10
12
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
pF
Cobo
2.0
25
SWITCHING CHARACTERISTICS
Turn-On Time
(See Figure 3 of MIL-PRF-19500/ 99)
Turn-Off Time
ton
hs
hs
200
toff
(See Figure 4 of MIL-PRF-19500/99)
1,000
(3) Pulse Test: Pulse Width 250 to 350ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 2 of 2
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Small Signal Bipolar Transistor, 35V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
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