5962-9559507HBX [MICROSEMI]
SRAM Module, 128KX32, 35ns, CMOS, CQFP68, 23.90 MM, 4.06 MM HEIGHT, CERAMIC, QFP-68;![5962-9559507HBX](http://pdffile.icpdf.com/pdf2/p00226/img/icpdf/WS128K32-20G_1326616_icpdf.jpg)
型号: | 5962-9559507HBX |
厂家: | ![]() |
描述: | SRAM Module, 128KX32, 35ns, CMOS, CQFP68, 23.90 MM, 4.06 MM HEIGHT, CERAMIC, QFP-68 静态存储器 内存集成电路 |
文件: | 总11页 (文件大小:375K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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WS128K32-XXX
White Electronic Designs
128Kx32 SRAM MODULE, SMD 5962-93187 & 5962-95595
ꢀ
Commercial, Industrial and Military Temperature
Ranges
FEATURES
ꢀ
ꢀ
ꢀ
Access Times of 15, 17, 20, 25, 35, 45, 55ns
MIL-STD-883 Compliant Devices Available
Packaging
ꢀ
ꢀ
ꢀ
ꢀ
5 Volt Power Supply
Low Power CMOS
TTL Compatible Inputs and Outputs
• 66 pin, PGA Type, 1.075" square, Hermetic Ce
ramic HIP (Package 400)
• 68 lead, 40mm CQFP (G4T)1, 3.56mm (0.140")
(Package 502)
Built in Decoupling Caps and Multiple Ground Pins
for Low Noise Operation
ꢀ
Weight:
WS128K32-XG1UX1 - 5 grams typical
WS128K32-XG1TX - 5 grams typical
WS128K32-XG2UX - 8 grams typical
WS128K32-XG2LX - 8 grams typical
WS128K32-XH1X - 13 grams typical
WS128K32-XG4TX1 - 20 grams typical
• 68 lead, 22.4mm CQFP (G2U), 3.56mm (0.140"),
(Package 510)
• 68 lead, 22.4mm (0.880") square, CQFP (G2L),
5.08mm (0.200") high, (Package 528).
• 68 lead, 23.9mm Low Profile CQFP (G1U)1,
3.57mm (0.140"), (Package 519)
• 68 lead, 23.9mm Low Profile CQFP (G1T), 4.06
mm (0.160"), (Package 524)
Organized as 128Kx32; User Configurable as
256Kx16 or 512Kx8
ꢀ
All devices are upgradeable to 512Kx32
Note 1: Package Not Recommended For New Design
ꢀ
FIG. 1 PIN CONFIGURATION FOR WS128K32N-XH1X
TOP VIEW
PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
A0-16 Address Inputs
WE1-4
CS1-4
OE
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
VCC
13
14
15
16
6
7
GND
NC Not Connected
3
4
5
0
1
2
11
12
BLOCK DIAGRAM
9
October 2003 Rev. 14
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WS128K32-XXX
White Electronic Designs
PIN CONFIGURATION FOR WS128K32-XG4TX1
TOP VIEW
FIG. 2
PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
A0-16
WE
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
CS1-4
OE
VCC
GND
NC
Not Connected
BLOCK DIAGRAM
Note 1: Package Not Recommended For New Design
FIG. 3
PIN CONFIGURATION FOR WS128K32-XG2UX, WS128K32-XG2LX, WS128K32-XG1TX AND
WS128K32-XG1UX1
PIN DESCRIPTION
TOP VIEW
I/O0-31 Data Inputs/Outputs
A0-16
WE1-4
CS1-4
OE
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
VCC
GND
NC
Not Connected
BLOCK DIAGRAM
Note 1: Package Not Recommended For New Design
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
2
WS128K32-XXX
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS
TRUTH TABLE
Parameter
Symbol
TA
Min
-55
Max
+ 125
+ 150
Vcc+ 0.5
150
Unit
°C
°C
V
CS
H
L
OE
X
WE
X
Mode
Stand b y
Read
Data I/O
High Z
Power
Stand b y
Active
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
L
H
Data Out
Data In
High Z
TSTG
VG
-65
L
X
L
Write
Active
-0.5
L
H
H
Out Disab le
Active
TJ
°C
V
CAPACITANCE
VCC
-0.5
7.0
(TA = +25°C)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
COE
Conditions
IN = 0V, f = 1.0 MHz
VIN = 0V, f = 1.0 MHz
Max Unit
Parameter
Symbol
Min
Max
Unit
V
OE capacitance
V
50
pF
pF
Supply Voltage
VCC
4.5
5.5
WE1-4 capacitance
HIP (PGA) H1
CQFP G4T
CQFP G2U/G2L
CQFP G1U/G1T
CWE
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
VIH
2.2
VCC + 0.3
+ 0.8
V
20
50
20
20
VIL
-0.3
-55
V
TA
+ 125
°C
CS1-4 capacitance
CCS
CI/O
CAD
V
IN = 0V, f = 1.0 MHz
I/O = 0V, f = 1.0 MHz
VIN = 0V, f = 1.0 MHz
20
20
50
pF
pF
pF
Data I/O capacitance
V
Address input capacitance
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C TO +125°C)
Parameter
Sym
Conditions
-15
Max
-17
Min Max
-20
Min Max
-25
Max
Units
Min
Min
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
ILI
ILO
VCC = 5.5, VIN = GND to VCC
10
10
10
10
10
10
µA
µA
mA
mA
V
CS = VIH, OE = VIH, VOUT = GND to VCC
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
IOL = 8mA, VCC = 4.5
10
10
ICC
600
80
600
600
600
60
ISB
80
0.4
80
0.4
Output Low Voltage
Output High Voltage
VOL
VOH
0.4
0.4
IOH = -4.0mA, VCC = 4.5
2.4
2.4
2.4
2.4
V
Parameter
Sym
Conditions
-35
-45
-55
Units
Min
Max
Min
Max
Min
Max
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
ILI
ILO
VCC = 5.5, VIN = GND to VCC
10
10
10
µA
µA
mA
mA
V
CS = VIH, OE = VIH, VOUT = GND to VCC
10
600
60
10
10
ICC
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
IOL = 2.1mA, VCC = 4.5
600
60
600
60
ISB
Output Low Voltage
Output High Voltage
VOL
VOH
0.4
0.4
0.4
IOH = -1.0mA, VCC = 4.5
2.4
2.4
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
DATA RETENTION CHARACTERISTICS (FOR WS128K32L-XXX ONLY)
(TA = -55°C TO +125°C), (TA = -40°C TO +85°C)
Characteristic
Sym
Conditions
Min
Typ
Max
Units
V
Data Retention Voltage
VCC
VCC = 2.0V
2
-
-
1
-
-
2
-
Data Retention Quiescent Current
Chip Disable to Data Retention Time (1)
ICCDR
TCDR
CS ≥ VCC -0.2V
VIN ≥ VCC -0.2V
mA
ns
0
Operation Recovery Time (1)
TR
or VIN - 0.2V
TRC
-
ns
NOTE: Parameter guaranteed, but not tested.
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WS128K32-XXX
White Electronic Designs
AC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C TO +125°C)
Parameter
Read Cycle
Symbol
-15
-17
-20
-25
-35
-45
-55
Units
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
Read Cycle Time
tRC
tAA
15
0
17
0
20
0
25
0
35
0
45
0
55
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
15
17
20
25
35
45
55
Output Hold from Address Change
Chip Select Access Time
tOH
tACS
tOE
15
10
17
10
20
12
25
15
35
20
45
25
55
30
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
tCLZ1
tOLZ1
tCHZ1
tOHZ1
3
0
3
0
3
0
3
0
3
0
3
0
3
0
12
12
12
12
12
12
12
12
20
20
20
20
20
20
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C TO +125°C)
Parameter
Symbol
-15 -17 -20 -25
-35
-45
-55
Units
Write Cycle
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
WS128K32-XXX /
Write Cycle Time
tWC
tCW
tAW
tDW
tWP
15
14
14
10
14
0
17
14
15
10
14
0
20
15
15
12
15
0
25
20
20
15
20
0
35
25
25
20
25
0
45
30
30
25
30
0
55
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
EDI8C32128C
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
45
45
25
45
0
Address Setup Time
Address Hold Time
tAS
tAH
0
0
0
0
0
0
0
Output Active from End of Write
Write Enab le to Outp ut in High Z
Data Hold Time
tOW1
tWHZ1
tDH
3
3
3
3
4
4
4
10
10
12
15
20
25
25
0
0
0
0
0
0
0
1. This parameter is guaranteed by design but not tested.
AC TEST CONDITIONS
FIG. 4 AC TEST CIRCUIT
Parameter
Typ
Unit
V
Input Pulse Levels
VIL = 0, VIH = 3.0
Input Rise and Fall
5
ns
Input and Output Reference Level
Output Timing Reference Level
1.5
1.5
V
V
Notes:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
4
WS128K32-XXX
White Electronic Designs
FIG. 5
FIG. 6
FIG. 7
TIMING WAVEFORM - READ CYCLE
WRITE CYCLE - WE CONTROLLED
WRITE CYCLE - CS CONTROLLED
WS32K32-XHX
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WS128K32-XXX
White Electronic Designs
66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H1)
PACKAGE 400:
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G4T)1
PACKAGE 502:
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Note 1: Package Not Recommended For New Designs
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
6
WS128K32-XXX
White Electronic Designs
PACKAGE 510:
68 LEAD, LOW PROFILE CERAMIC QUAD FLAT PACK, CQFP (G2U)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G1U)1
PACKAGE 519:
00/80
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Note 1: Package Not Recommended For New Designs
7
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WS128K32-XXX
White Electronic Designs
PACKAGE 524: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G1T)
25.27 (0.995) ± 0.13 (0.005) SQ
4.06 (0.160) MAX
23.88 (0.940) ± 0.25 (0.010) SQ
0.25 (0.010) MAX
0.83 (0.033)
± 0.32 (0.013)
00/80
0.84 (0.033) REF
DETAIL A
SEE DETAIL "A"
1.27 (0.050)
0.38 (0.015) ± 0.05 (0.002)
20.3 (0.800) REF
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 528: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2L)
25.15 (0.990) – 0.25 (0.010) MAX
5.10 (0.200) MAX
22.36 (0.880) – 0.25 (0.010) MAX
0.25 (0.010) – 0.10 (0.002)
0.23 (0.009) REF
24.0 (0.946)
– 0.25 (0.010)
R 0.127
(0.005)
1.37 (0.054) MIN
0.004
2
O / 9O
0.89 (0.035)
– 1.14 (0.045)
1.27 (0.050) TYP
0.38 (0.015) – 0.05 (0.002)
20.31 (0.800) REF
0.940" TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
8
WS128K32-XXX
White Electronic Designs
ORDERING INFORMATION
W S 128K 32 X - XXX X X X
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
DEVICE GRADE:
Q = MIL-STD-883 Compliant
M= Military Screened
I = Industrial
C = Commercial
-55°C to + 125°C
-40°C to + 85°C
0°C to + 70°C
PACKAGE TYPE:
H1= 1.075" sq. Ceramic Hex-In-line Package, HIP (Package 400)
G2U = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 510)
G2L = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 528)
1
G1U = 23.9mm Ceramic Quad Flat Pack, Low Profile CQFP (Package 519)
G1T = 23.9mm Ceramic Quad Flat Pack, Low Profile CQFP (Package 524)
1
G4T = 40 mm Low Profile CQFP (Package 502)
ACCESS TIME (ns)
IMPROVEMENT MARK:
N = No Connect at pin 8, 21, 28 and 39 in HIP for Upgrades
L = Low Power*
ORGANIZATION, 128Kx32
User configurable as 256Kx16 or 512Kx8
SRAM
WHITE ELECTRONIC DESIGNS CORPORATION
Note 1: Package Not Recommended For New Designs
* Low Power Data Retention only available in G2U, G2L, G1U, G1T PackageTypes
9
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WS128K32-XXX
White Electronic Designs
DEVICE TYPE
SPEED
PACKAGE
SMD NO.
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
15ns
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
5962-93187 05H4X
5962-93187 06H4X
5962-93187 07H4X
5962-93187 08H4X
5962-93187 09H4X
5962-93187 10H4X
5962-93187 11H4X
1
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
15ns
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
5962-95595 05HYX
1
5962-95595 06HYX
1
5962-95595 07HYX
1
5962-95595 08HYX
1
5962-95595 09HYX
1
5962-95595 10HYX
1
5962-95595 11HYX
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
15ns
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
5962-95595 05HMX
5962-95595 06HMX
5962-95595 07HMX
5962-95595 08HMX
5962-95595 09HMX
5962-95595 10HMX
5962-95595 11HMX
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
15ns
68 lead CQFP/J(G1U)1
68 lead CQFP/J (G1U)1
68 lead CQFP/J (G1U)1
68 lead CQFP/J (G1U)1
68 lead CQFP/J (G1U)1
68 lead CQFP/J (G1U)1
68 lead CQFP/J (G1U)1
5962-95595 05H9X
5962-95595 06H9X
5962-95595 07H9X
5962-95595 08H9X
5962-95595 09H9X
5962-95595 10H9X
5962-95595 11H9X
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
15ns
68 lead CQFP/J (G2L)
68 lead CQFP/J(G2L)
68 lead CQFP/J(G2L)
68 lead CQFP/J(G2L)
68 lead CQFP/J(G2L)
68 lead CQFP/J(G2L)
68 lead CQFP/J(G2L)
5962-95595 05HAX
5962-95595 06HAX
5962-95595 07HAX
5962-95595 08HAX
5962-95595 09HAX
5962-95595 10HAX
5962-95595 11HAX
Note 1: Package Not Recommended For New Design
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
10
WS128K32-XXX
White Electronic Designs
DEVICE TYPE
SPEED
PACKAGE
SMD NO.
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
15ns
68 lead CQFP/J (G1T)
68 lead CQFP/J (G1T)
68 lead CQFP/J (G1T)
68 lead CQFP/J (G1T)
68 lead CQFP/J (G1T)
68 lead CQFP/J (G1T)
68 lead CQFP/J (G1T)
5962-95595 05HBX
5962-95595 06HBX
5962-95595 07HBX
5962-95595 08HBX
5962-95595 09HBX
5962-95595 10HBX
5962-95595 11HBX
Note 1: Package Not Recommended For New Design
11
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
相关型号:
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5962-9559507HXX
SRAM Module, 512KX8, 35ns, CMOS, CQFP68, 40 MM, 3.50 MM HEIGHT, HERMETIC SEALED, CERAMIC, QFP-68
WEDC
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