5962-9690202HTX [MICROSEMI]
Standard SRAM, 256KX16, 25ns, CMOS, CDSO44, CERAMIC, FORMED, DFP-44;型号: | 5962-9690202HTX |
厂家: | Microsemi |
描述: | Standard SRAM, 256KX16, 25ns, CMOS, CDSO44, CERAMIC, FORMED, DFP-44 CD 静态存储器 |
文件: | 总9页 (文件大小:819K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
WMS256K16-XXX
256Kx16 MONOLITHIC SRAM, SMD 5962-96902
PIN CONFIGURATION FOR WMS256K16-XXX
FEATURES
Access Times 17, 20, 25, 35ns
MIL-STD-883 Compliant Devices Available
Packaging
44 CSOJ
44 FlatpacK
TOP VIEW
• 44 pin Ceramic SOJ (Package 102)
• 44 lead Ceramic Flatpack (Package 225)
• 44 lead Formed Ceramic Flatpack
Organized as 256Kx16
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
A0
A1
A2
A3
A4
CS#
I/O1
I/O2
I/O3
I/O4
A17
A16
A15
OE#
UB#
LB#
I/O16
I/O15
I/O14
I/O13
GND
Data Byte Control:
• Lower Byte (LB#) = I/O1-8
• Upper Byte (UB#) = I/O9-16
9
2V Minimum Data Retention for battery back up operation
10
11
12
13
14
15
16
17
18
19
20
21
22
(WMS256K16L-XXX Low Power Version Only)
VCC
GND
I/O5
I/O6
I/O7
I/O8
WE#
A5
A6
A7
A8
A9
VCC
Commercial, Industrial and Military Temperature Range
5V Power Supply
I/O12
I/O11
I/O10
I/O9
NC
A14
A13
A12
A11
Low Power CMOS
TTL Compatible Inputs and Outputs
A10
PIN DESCRIPTION
A0-17
LB#
Address Inputs
Lower-Byte Control (I/O1-8
Upper-Byte Control (I/O9-16
Data Input/Output
Chip Select
)
UB#
I/O1-16
CS#
OE#
WE#
VCC
)
Output Enable
Write Enable
+5.0V Power
GND
NC
Ground
No Connection
Microsemi Corporation reserves the right to change products or specifications without notice.
February 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 7
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS256K16-XXX
TRUTH TABLE
Data I/O
Power
CS#
WE#
OE#
LB#
UB#
Mode
I/O1-8
I/O9-16
H
L
L
X
H
X
X
H
X
X
X
H
L
X
X
H
H
L
Not Select
High Z
High Z
Standby
Active
Output Disable
High Z
High Z
Data Out
High Z
High Z
Data Out
Data Out
High Z
L
L
H
L
L
H
L
Read
Write
Active
Active
L
Data Out
Data In
High Z
L
H
L
X
H
L
Data In
Data In
L
Data In
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
TA
Min
-55
-65
-0.5
Max
+125
+150
VCC+0.5
150
Unit
Parameter
Symbol
VCC
VIH
Min
4.5
Max
5.5
Unit
V
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
°C
°C
V
Supply Voltage
TSTG
VG
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
2.2
VCC + 0.3
+0.8
V
VIL
-0.3
-55
V
TJ
°C
V
TA
+125
°C
VCC
-0.5
7.0
CAPACITANCE
TA = +25°C
Parameter
Symbol
Condition
Max
20
Unit
pF
Input capacitance
Output capacitance
CIN
VIN = 0V, f = 1.0MHz
VOUT = 0V, f = 1.0MHz
COUT
20
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
Conditions
Min
Max
10
Units
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
ILI
ILO
VCC = 5.5, VIN = GND to VCC
μA
μA
mA
mA
V
CS# = VIH, OE# = VIH, VOUT = GND to VCC
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5
IOL = 6mA, VCC = 4.5
10
ICC
ISB
275
17
Output Low Voltage
Output High Voltage
VOL
VOH
0.4
IOH = -4.0mA, VCC = 4.5
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
LOW POWER DATA RETENTION CHARACTERISTICS (WMS256K16L-XXX ONLY)
-55°C ≤ TA ≤ +125°C
Parameter
Symbol
Conditions
CS# ≥ VCC -0.2V
VCC = 3V
Min
Typ
Max
5.5
8.0
Units
V
Data Retention Supply Voltage
Data Retention Current
VDR
2.0
1
1.0
mA
ICCDR
Microsemi Corporation reserves the right to change products or specifications without notice.
February 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 7
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS256K16-XXX
AC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
-17
-20
-25
-35
Symbol
Units
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle
Read Cycle Time
Address Access Time
Output Hold from Address Change
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
LB#, UB# Access Time
LB#, UB# Enable to Low Z Output
LB#, UB# Disable to High Z Output
1. This parameter is guaranteed by design but not tested.
tRC
tAA
17
20
25
35
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
17
20
25
35
tOH
tACS
tOE
0
0
0
0
17
10
20
12
25
15
35
20
1
tCLZ
2
0
5
0
5
0
5
0
1
tOLZ
tCHZ
tOHZ
1
9
9
10
10
10
12
12
12
14
15
15
17
1
tBA
tBLZ
1
0
0
0
0
1
tBHZ
9
10
12
15
AC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
-17
-20
-25
-35
Symbol
Units
Min
17
14
14
10
14
0
Max
Min
20
17
17
12
17
0
Max
Min
25
20
20
15
20
0
Max
Min
35
25
25
20
25
0
Max
Write Cycle
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
tWC
tCW
tAW
tDW
tWP
tAS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Setup Time
Address Hold Time
tAH
2
0
2
0
2
0
2
0
1
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
LB#, UB# Valid to End of Write
1. This parameter is guaranteed by design but not tested.
tOW
1
tWHZ
9
10
10
15
tDH
tBW
0
14
0
17
0
20
0
25
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Typ
Unit
V
Input Pulse Levels
V
IL = 0, VIH = 3.0
Input Rise and Fall
5
ns
V
IOL
Input and Output Reference Level
Output Timing Reference Level
1.5
1.5
Current Source
V
NOTES:
Vz is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
VZ » 1.5V
(Bipolar Supply)
D.U.T.
Ceff = 50 pf
Vz is typically the midpoint of VOH and VOL
OL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
.
I
IOH
Current Source
Microsemi Corporation reserves the right to change products or specifications without notice.
February 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 7
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS256K16-XXX
TIMING WAVEFORM – READ CYCLE
tRC
ADDRESS
CS#
tAA
tRC
tCHZ
ADDRESS
DATA I/O
tACS
tAA
LB#, UB#
tBHZ
tBA
tOH
tBLZ
tCLZ
PREVIOUS DATA VALID
DATA VALID
OE#
READ CYCLE 1 (CS# = OE# = VIL, UB# or LB# = VIL, WE# = VIH
)
tOE
tOLZ
tOHZ
DATA I/O
DATA VALID
HIGH IMPEDANCE
READ CYCLE 2 (WE# = VIH
)
WRITE CYCLE – WE# CONTROLLED
tWC
ADDRESS
tAW
tAH
tCW
CS#
tBW
LB#, UB#
WE#
tAS
tWP
tOW
tDH
tWHZ
tDW
DATA I/O
DATA VALID
WRITE CYCLE 1, WE# CONTROLLED
WRITE CYCLE – CS# CONTROLLED
WRITE CYCLE – LB#, UB# CONTROLLED
tWC
tWC
ADDRESS
ADDRESS
tAW
tAW
tAH
tAH
tAS
tAS
tCW
tCW
CS#
LB#, UB#
WE#
CS#
LB#, UB#
WE#
tBW
tBW
tWP
tWP
tDW
tDH
tDW
tDH
DATA I/O
DATA VALID
DATA I/O
DATA VALID
WRITE CYCLE 2, CS# CONTROLLED
WRITE CYCLE 3, LB#, UB# CONTROLLED
Microsemi Corporation reserves the right to change products or specifications without notice.
February 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 7
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS256K16-XXX
PACKAGE 102: 44 LEAD, CERAMIC SOJ
28.70 (1.13) 0.25 (0.010)
3.96 (0.156) MAX
0.89 (0.035)
Radius TYP
0.2 (0.008)
0.05 (0.002)
11.3 (0.446)
0.2 (0.009)
9.55 (0.376) 0.25 (0.010)
1.27 (0.050) 0.25 (0.010)
1.27 (0.050) TYP
26.7 (1.050) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 225: 44 LEAD, CERAMIC FLAT PACK
28.45 (1.120)
0.26 (0.010)
2.60 (0.102)
MAX
12.95 (0.510)
0.13 (0.005)
10.16 (0.400)
0.51 (0.020)
0.43 (0.017)
0.05 (0.002)
1.27 (0.050) TYP
0.14 (0.006)
0.05 (0.002)
26.67 (1.050) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
February 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 7
5
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS256K16-XXX
PACKAGE 211: 44 LEAD FORMED, CERAMIC FLAT PACK
3.81 (0.150)
PIN 1
28.45 (1.120)
0.26 (0.010)
MAX
IDENTIFIER
1.52 (0.060) TYP
12.95 (0.510)
0.13 (0.005)
16.76 (0.660)
0.13 (0.005)
0.43 (0.017)
0.05 (0.002)
1.27 (0.050) TYP
0.14 (0.006)
0.05 (0.002)
+
+
1.90 (0.075) TYP
26.67 (1.050) TYP
0.46 (0.030) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
February 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 7
6
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS256K16-XXX
ORDERING INFORMATION
W M S 256K16 X - XXX X X X
MICROSEMI CORPORATION
MONOLITHIC
SRAM
ORGANIZATION, 256K x 16
IMPROVEMENT MARK:
Blank = Standard Power
L = Low Power Data Retention
ACCESS TIME (ns)
PACKAGE:
DL = 44 Lead Ceramic SOJ (Package 102)
FL = 44 Lead Ceramic Flatpack (Package 225)
FG = 44 Lead Formed Ceramic Flatpack
DEVICE GRADE:
M = Military Screened -55°C to +125°C
I = Industrial
-40°C to +85°C
0°C to +70°C
C = Commercial
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
Microsemi Corporation reserves the right to change products or specifications without notice.
February 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 7
7
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS256K16-XXX
DEVICE TYPE
SPEED
35ns
PACKAGE
44 lead SOJ (DL)
44 lead SOJ (DL)
44 lead SOJ (DL)
44 lead SOJ (DL)
SMD NO
256K x 16 SRAM Monolithic
256K x 16 SRAM Monolithic
256K x 16 SRAM Monolithic
256K x 16 SRAM Monolithic
5962-96902 01HMX
5962-96902 02HMX
5962-96902 03HMX
5962-96902 04HMX
25ns
20ns
17ns
256K x 16 SRAM Monolithic
256K x 16 SRAM Monolithic
256K x 16 SRAM Monolithic
256K x 16 SRAM Monolithic
35ns
25ns
20ns
17ns
44 lead Flatpack (FL)
44 lead Flatpack (FL)
44 lead Flatpack (FL)
44 lead Flatpack (FL)
5962-96902 01HNX
5962-96902 02HNX
5962-96902 03HNX
5962-96902 04HNX
256K x 16 SRAM Monolithic
256K x 16 SRAM Monolithic
256K x 16 SRAM Monolithic
35ns
25ns
20ns
44 lead Formed Flatpack (FG)
44 lead Formed Flatpack (FG)
44 lead Formed Flatpack (FG)
5962-96902 01HTX
5962-96902 02HTX
5962-96902 03HTX
Microsemi Corporation reserves the right to change products or specifications without notice.
February 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 7
8
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS256K16-XXX
Document Title
256Kx16 MONOLITHIC SRAM, SMD 5962-96902
Revision History
Rev # History
Release Date
Status
Rev 7
Changes (Pg. 1-9)
February 2011
Final
7.1 Change document layout from White Electronic Designs to Microsemi
7.2 Added document 'Revision History' page
Microsemi Corporation reserves the right to change products or specifications without notice.
February 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 7
9
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
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