APT1101RBFLLG [MICROSEMI]
Power Field-Effect Transistor, 13A I(D), 1100V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN;
| 型号： | APT1101RBFLLG |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 13A I(D), 1100V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT1101RBFLL
APT1101RSFLL
1100V 13A 1.000Ω
R
POWER MOS 7 FREDFET
D3PAK
TO-247
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
D
S
G
•
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT1101RBFLL_SFLL
UNIT
VDSS
ID
Drain-Source Voltage
1100
13
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
52
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
403
PD
3.23
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
13
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
30
4
1300
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1100
2
Drain-Source On-State Resistance
(VGS = 10V, 6.5A)
1.00
100
500
±100
5
Zero Gate Voltage Drain Current (VDS = 1100V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 880V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
IDSS
µA
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
APT1101RBFLL_SFLL
Symbol
Ciss
Coss
Crss
Qg
TestConditions
MIN
TYP
MAX
Characteristic
UNIT
Input Capacitance
2345
388
65
V
= 0V
GS
pF
V
= 25V
Output Capacitance
DS
f = 1 MHz
Reverse Transfer Capacitance
3
V
= 10V
Total Gate Charge
90
GS
V
= 550V
Qgs
nC
ns
DD
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
12
I
= 13A @ 25°C
D
Qgd
61
RESISTIVESWITCHING
td(on)
tr
12
V
= 15V
GS
7
V
= 550V
DD
td(off)
32
Turn-off Delay Time
Fall Time
I
= 13A @ 25°C
D
tf
R
= 1.6Ω
14
G
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
364
105
748
139
Turn-on Switching Energy
V
= 733V, V = 15V
GS
DD
I
Turn-off Switching Energy
= 13A, R = 5Ω
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Eon
Eoff
Turn-on Switching Energy
V
= 733V, V = 15V
GS
DD
Turn-off Switching Energy
I
= 13A, R = 5Ω
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
13
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
52
2
Volts
V/ns
(VGS = 0V, IS = -13A)
1.3
18
dv
/
dv
5
Peak Diode Recovery
/
dt
dt
Reverse Recovery Time
(IS = -13A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
210
710
trr
ns
µC
Reverse Recovery Charge
(IS = -13A, di/dt = 100A/µs)
1.0
3.6
10
Qrr
Peak Recovery Current
(IS = -13A, di/dt = 100A/µs)
IRRM
Amps
14
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.31
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
4 Starting T = +25°C, L = 15.38mH, R = 25Ω, Peak I = 13A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
device itself.
I
≤ -13A
/
≤ 700A/µs
V
R ≤ 1100 T ≤ 150°C
dt
S
J
6
Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.35
0.30
0.9
0.25
0.7
0.20
0.5
0.15
Note:
t
1
0.3
0.10
t
2
t
1
0.05
Duty Factor D =
Peak T = P x Z
/
t
0.1
2
+ T
SINGLEPULSE
0.05
J
DM θJC
C
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT1101RBFLL_SFLL
25
20
15
10
5
V
=15 & 10V
7V
GS
RC MODEL
Junction
temp. (°C)
6.5V
0.0258
0.107
0.177
0.00295F
0.0114F
0.174F
6V
Power
(watts)
5.5V
5V
Case temperature. (°C)
0
0
5
10
15
20
25
30
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
30
1.40
V
> I (ON) x
R
(ON)MAX.
DS
NORMALIZED TO
DS
D
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
= 10V @ 6.5A
GS
25
20
15
10
1.30
1.20
1.10
1.00
V
=10V
GS
T
J
= -55°C
V
=20V
T
= +25°C
GS
J
5
0
0.90
0.80
T
= +125°C
J
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10 12 14 16 18 20
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
14
12
10
8
1.15
1.10
1.05
1.00
6
4
0.95
0.90
2
0
25
50
75
100
125
150
-50 -25
0
25
50
75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
1.2
3
I
= 6.5A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
0.5
2.5
2.0
1.5
1.0
0.5
0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
APT1101RBFLL_SFLL
52
10,000
1,000
100
OPERATIONHERE
LIMITEDBYR (ON)
DS
C
iss
10
5
100µS
C
oss
1mS
1
10mS
.5
C
rss
T
=+25°C
C
T =+150°C
J
SINGLEPULSE
10
.1
10
1
100
1100
0
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
16
100
I
= 6.5A
D
V
=220V
DS
12
T =+150°C
J
T =+25°C
J
V
=550V
DS
V
=880V
DS
8
10
4
0
1
0
20
40
60
80
100 120 140
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q ,TOTALGATECHARGE(nC)
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
g
SD
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
60
40
t
d(off)
50
40
30
t
f
30
V
= 733V
DD
= 5Ω
V
= 733V
DD
= 5Ω
R
T
G
R
T
G
= 125°C
J
20
10
0
= 125°C
J
L = 100µH
L = 100µH
20
10
0
t
r
t
d(on)
6
8
10
12
I
14
(A)
16
18
20
6
8
10
12
I
14
(A)
16
18
20
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1200
1000
800
1400
1200
1000
800
V
= 733V
V
I
= 733V
DD
DD
= 13A
R
= 5Ω
G
D
T
= 125°C
T
= 125°C
J
E
on
J
E
L = 100µH
on
L = 100µH
EON includes
EON includes
diode reverse recovery.
diode reverse recovery.
600
600
400
400
E
E
off
off
200
0
200
0
6
8
10
12
I
14
(A)
16
18
20
0
5
10 15 20 25 30 35 40 45 50
R ,GATERESISTANCE(Ohms)
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT1101RBFLL_SFLL
Gate Voltage
10 %
90%
T
= 125 C
Gate Voltage
J
T
= 125 C
J
t
t
d(off)
d(on)
Drain Voltage
t
r
Drain Current
90%
90%
t
f
5 %
Drain Voltage
5 %
10 %
10%
0
Drain Current
Switching Energy
Switching Energy
Figure19,Turn-offSwitchingWaveformsandDefinitions
Figure18,Turn-onSwitchingWaveformsandDefinitions
APT15DF100
VCE
IC
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
D3PAKPackageOutline
TO-247 Package Outline
4.98 (.196)
4.69 (.185)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
5.31 (.209)
5.08 (.200)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15 (.045)
1.49 (.059)
2.49 (.098)
1.47 (.058)
1.57 (.062)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99 (.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
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