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APT1201R4SFLLG [MICROSEMI]

Power Field-Effect Transistor, 9A I(D), 1200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3;

APT1201R4SFLLG


元器件型号：	APT1201R4SFLLG
生产厂家：	MICROSEMI CORPORATION
描述和应用：	Power Field-Effect Transistor, 9A I(D), 1200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3
PDF文件：	总5页 (文件大小：418K)
下载文档：	下载PDF数据表文档文件
型号参数：APT1201R4SFLLG参数

APT1201R4SLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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43 ADPOW

APT1201R5BVFR

POWER MOS V

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33 ADPOW

APT1201R5BVFR

POWER MOS V

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12 ADPOW

APT1201R5BVFRG

Power Field-Effect Transistor, 10A I(D), 1200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

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0 MICROSEMI

APT1201R5BVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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53 ADPOW

APT1201R5SVFR

POWER MOS V

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28 ADPOW

APT1201R5SVFR

POWER MOS V

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13 ADPOW

APT1201R6

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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28 ADPOW

APT1201R6

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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14 ADPOW

APT1201R6BVFR

POWER MOS V FREDFET

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19 ADPOW

APT1201R6BVFR

POWER MOS V FREDFET

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46 ADPOW

APT1201R6BVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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71 ADPOW

APT1201R6BVR

Power Field-Effect Transistor, 8A I(D), 1200V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN

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0 ADPOW

APT1201R6BVR

Power Field-Effect Transistor, 8A I(D), 1200V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN

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1 MICROSEMI

APT1201R6BVRG

Power Field-Effect Transistor, 8A I(D), 1200V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,

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0 MICROSEMI

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