APT1204R7SFLLG [MICROSEMI]

Power Field-Effect Transistor, 3.5A I(D), 1200V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3;
APT1204R7SFLLG
元器件型号: APT1204R7SFLLG
生产厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述和应用:

Power Field-Effect Transistor, 3.5A I(D), 1200V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3

PDF文件: 总5页 (文件大小:245K)
下载文档:  下载PDF数据表文档文件
型号参数:APT1204R7SFLLG参数

APT1204R7SLL

Volts:1200V RDS(ON):4.7Ohms ID(cont:)3Amps|MOSFETs

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11 ETC

APT12057B2FLL

POWER MOS 7 FREDFET

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33 ADPOW

APT12057B2FLL

POWER MOS 7 FREDFET

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11 ADPOW

APT12057B2LL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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37 ADPOW

APT12057JFLL

POWER MOS 7 FREDFET

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31 ADPOW

APT12057JFLL

POWER MOS 7 FREDFET

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14 ADPOW

APT12057JLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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45 ADPOW

APT12057LFLL

POWER MOS 7 FREDFET

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17 ADPOW

APT12057LFLL

POWER MOS 7 FREDFET

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13 ADPOW

APT12057LFLL

Power Field-Effect Transistor, 22A I(D), 1200V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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0 ADPOW

APT12057LFLLG

Power Field-Effect Transistor, 22A I(D), 1200V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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0 MICROSEMI

APT12057LLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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35 ADPOW

APT-12057R

6000MHz - 12000MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

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0 AGILENT

APT12060B2VFR

POWER MOS V

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20 ADPOW

APT12060B2VFR

POWER MOS V

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29 ADPOW