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APT15GT120BRDQ1E3 [MICROSEMI]

Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN;

APT15GT120BRDQ1E3


元器件型号：	APT15GT120BRDQ1E3
生产厂家：	MICROSEMI CORPORATION
描述和应用：	Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN 局域网栅功率控制晶体管
PDF文件：	总9页 (文件大小：1011K)
下载文档：	下载PDF数据表文档文件
型号参数：APT15GT120BRDQ1E3参数

APT15GT120BRDQ1G

Thunderbolt IGBT

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30 ADPOW

APT15GT120BRDQ1G

Thunderbolt IGBT

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24 ADPOW

APT15GT120BRDQ1G

Power Semiconductors Power Modules

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8 MICROSEMI

APT15GT120BRG

Power Semiconductors Power Modules

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7 MICROSEMI

APT15GT120BRG

Thunderbolt IGBT

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27 ADPOW

APT15GT120BRG

Thunderbolt IGBT

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11 MICROSEMI

APT15GT120BRG

Thunderbolt IGBT

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18 ADPOW

APT15GT120SR

Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel, D3PAK-3

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0 MICROSEMI

APT15GT120SR

Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel, D3PAK-3

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0 MICROSEMI

APT15GT120SRDQ1

Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel

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0 MICROSEMI

APT15GT120SRDQ1G

Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel

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0 MICROSEMI

APT15GT120SRE3

Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel, D3PAK-3

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0 MICROSEMI

APT15GT120SRG

Thunderbolt IGBT

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13 MICROSEMI

APT15GT60BR

The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.

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54 ADPOW

APT15GT60BRD

The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.

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65 ADPOW

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