APT20M11JLL [MICROSEMI]

Power Field-Effect Transistor, 176A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4;
APT20M11JLL
元器件型号: APT20M11JLL
生产厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述和应用:

Power Field-Effect Transistor, 176A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

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PDF文件: 总5页 (文件大小:164K)
下载文档:  下载PDF数据表文档文件
型号参数:APT20M11JLL参数

APT20M11JVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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75 ADPOW

APT20M11JVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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63 ADPOW

APT20M120JCU2

ISOTOP® Boost chopper MOSFET + SiC chopper diode Power module

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19 MICROSEMI

APT20M120JCU3

ISOTOP® Buck chopper MOSFET SiC chopper diode Power module

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11 MICROSEMI

APT20M13PVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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41 ADPOW

APT20M16B2FLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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38 ADPOW

APT20M16B2FLL

POWER MOS 7 FREDFET

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15 ADPOW

APT20M16B2FLL_04

POWER MOS 7 FREDFET

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16 ADPOW

APT20M16B2LL

POWER MOS 7 MOSFET

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9 ADPOW

APT20M16B2LL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

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36 ADPOW

APT20M16B2LL_04

POWER MOS 7 MOSFET

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21 ADPOW

APT20M16B2LLG

Power Field-Effect Transistor, 100A I(D), 200V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, B2, TMAX-3

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0 MICROSEMI

APT20M16LFLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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39 ADPOW

APT20M16LFLL

POWER MOS 7 FREDFET

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19 ADPOW

APT20M16LFLLG

Power Field-Effect Transistor, 100A I(D), 200V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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0 MICROSEMI