APT30M40B2VFRG [MICROSEMI]

Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3;
APT30M40B2VFRG
元器件型号: APT30M40B2VFRG
生产厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述和应用:

Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3

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PDF文件: 总4页 (文件大小:114K)
下载文档:  下载PDF数据表文档文件
型号参数:APT30M40B2VFRG参数

APT30M40B2VR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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49 ADPOW

APT30M40JVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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38 ADPOW

APT30M40JVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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59 ADPOW

APT30M40LVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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45 ADPOW

APT30M40LVFR

POWER MOS V FREDFET

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17 ADPOW

APT30M40LVFR

Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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0 MICROSEMI

APT30M40LVFR

POWER MOS V FREDFET

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9 ADPOW

APT30M40LVFRG

Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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0 MICROSEMI

APT30M40LVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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24 ADPOW

APT30M40LVRG

Power Field-Effect Transistor, 76A I(D), 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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0 MICROSEMI

APT30M45JNR

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 70A I(D)

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13 ETC

APT30M45JNR

70A, 300V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET

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0 MICROSEMI

APT30M45JNR

Power Field-Effect Transistor, 70A I(D), 300V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 ADPOW

APT30M50JNR

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 65A I(D)

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6 ETC

APT30M50JNR

65A, 300V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET

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0 MICROSEMI