APT30SCD120B [MICROSEMI]

Rectifier Diode, Schottky, 1 Element, 99A, 1200V V(RRM),;
APT30SCD120B
型号: APT30SCD120B
厂家: Microsemi    Microsemi
描述:

Rectifier Diode, Schottky, 1 Element, 99A, 1200V V(RRM),

二极管
文件: 总4页 (文件大小:127K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
APT30SCD120B  
APT30SCD120S  
1200V 30A  
Zero Recovery Silicon Carbide Schottky Diode  
PRODUCT APPLICATIONS  
PRODUCT BENEFITS  
PRODUCT FEATURES  
• Higher Reliability Systems  
• Zero Recovery Times (t  
)
• Anti-Parallel Diode  
-Switchmode Power Supply  
-Inverters  
rr  
• Minimizes or eliminates  
snubber  
• Popular TO-247 Package or  
surface mount D3PAK package  
D3PAK  
• Power Factor Correction (PFC)  
• Low Forward Voltage  
• Low Leakage Current  
1
2
2
1
1 - Cathode  
2 - Anode  
Back of Case -Cathode  
MAXIMUM RATINGS  
T = 25°C unless otherwise specied.  
C
Symbol Characteristic / Test Conditions  
Ratings  
Unit  
Maximum D.C. Reverse Voltage  
VR  
VRRM  
VRWM  
Maximum Peak Repetitive Reverse Voltage  
Maximum Working Peak Reverse Voltage  
1200  
Volts  
TC = 25°C  
99  
29  
IF  
Maximum D.C. Forward current  
TC = 135°C  
Amps  
IFRM  
IFSM  
150  
330  
Repetitive Peak Forward Suge Current (TJ = 45°C, tp = 10ms, Half Sine Wave)  
Non-Repetitive Forward Surge Current (TJ = 25°C, tp = 10ms, Half Sine)  
TC = 25°C  
291  
93  
Ptot  
Power Dissipation  
TC = 125°C  
W
TJ, TSTG  
TL  
Operating and Storage Junction Temperature Range  
Lead Temperature for 10 Seconds  
-55 to 150  
300  
°C  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
Min  
Typ  
Max  
Unit  
IF = 30A TJ = 25°C  
1.5  
2.1  
1.8  
VF  
Forward Voltage  
Volts  
IF = 30A, TJ = 150°C  
VR = 1200V TJ = 25°C  
VR = 1200V, TJ = 150°C  
600  
IRM  
Qc  
Maximum Reverse Leakage Current  
μA  
3000  
Total Capactive Charge VR = 800V, IF = 30A, di/dt = -100A/μs, TJ = 25°C  
Junction Capacitance VR = 0V, TJ = 25°C, f = 1MHz  
200  
2100  
228  
nC  
CT  
Junction Capacitance VR = 200V, TJ = 25°C, f = 1MHz  
Junction Capacitance VR = 400V, TJ = 25°C, f = 1MHz  
pF  
167  
Microsemi Website - http://www.microsemi.com  
APT30SCD120B_S  
THERMAL AND MECHANICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
Min  
Typ  
Max  
Unit  
Junction-to-Case Thermal Resistance  
0.43  
°C/W  
oz  
RθJC  
WT  
0.22  
5.9  
Package Weight  
g
10  
lb·in  
N·m  
Torque  
Maximum Mounting Torque  
1.1  
Microsemi reserves the right to change, without notice, the specications and information contained herein.  
TYPICAL PERFORMANCE CURVES  
0.60  
0.45  
0.40  
0.35  
0.30  
0.25  
Note:  
0.20  
0.15  
0.10  
0.05  
0
t
1
t
2
t
1
t
/
2
Duty Factor D =  
Peak T = P  
x Z  
+ T  
θJC C  
J
DM  
10-5  
10-4  
10-3  
10-2  
0.1  
1
10  
100  
RECTANGULAR PULSE DURATION (seconds)  
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION  
100  
140  
120  
100  
80  
T
= -55°C  
J
T
= 25°C  
J
100  
80  
60  
40  
20  
T
= 150°C  
J
T
= 125°C  
J
60  
40  
20  
0
0
25  
50  
75  
Case Temperature (°C)  
FIGURE 3, Maximum Forward Current vs. Case Temperature  
100  
125  
150  
0
1
2
3
4
5
6
7
8
V , ANODE-TO-CATHODE VOLTAGE (V)  
F
FIGURE 2, Forward Current vs. Forward Voltage  
TYPICAL PERFORMANCE CURVES  
APT30SCD120B_S  
300  
250  
200  
150  
100  
50  
1400  
1200  
1000  
800  
150°C  
125°C  
600  
400  
75°C  
25°C  
200  
0
0
0
200 400 600 800 1000 1200 1400  
25  
50  
75  
100  
125  
150  
V , REVERSE VOLTAGE (V)  
CASE TEMPERATURE (°C)  
R
Figure 4. Maximum Power Dissipation vs. Case Temperature  
Figure 5. Reverse Leakage Currents vs. Reverse Voltage  
290  
500  
dif/dt = -200A/s  
TJ = 125°C  
270  
400  
300  
250  
230  
210  
190  
170  
150  
200  
100  
0
0
200  
400  
600  
800  
200 300  
400  
500  
600 700  
800  
V , REVERSE VOLTAGE (V)  
VR, REVERSE VOLTAGE (V)  
Figure 6. Reverse Recovery Charge vs. VR  
R
Figure 7. Junction Capacitance vs. Reverse Voltage  
TO-247 Package Outline  
D3PAK Package Outline  
4.69 (.185)  
5.31 (.209)  
15.49 (.610)  
16.26 (.640)  
4.90 (.193)  
5.10 (.201)  
1.45 (.057)  
1.60 (.063)  
15.85 (.624)  
16.05(.632)  
13.30 (.524)  
13.60(.535)  
1.49 (.059)  
2.49 (.098)  
1.00 (.039)  
1.15(.045)  
5.38 (.212)  
6.20 (.244)  
6.15 (.242) BSC  
20.80 (.819)  
21.46 (.845)  
12.40 (.488)  
12.70 (.500)  
18.70 (.736)  
19.10 (.752)  
3.50 (.138)  
3.81 (.150)  
0.40 (.016)  
0.65 (.026)  
4.50 (.177) Max  
.
1.20 (.047)  
1.40 (.055)  
0.020 (.001)  
0.250 (.010)  
2.70 (.106)  
2.90 (.114)  
1.90 (.075)  
2.10 (.083)  
2.40 (.094)  
1.65 (.065)  
2.13 (.084)  
0.40 (.016)  
1.016(.040)  
2.70 (.106)  
1.15 (.045)  
1.45 (.057)  
19.81 (.780)  
20.32 (.800)  
(Base of Lead)  
1.01 (.040)  
1.40 (.055)  
5.45 (.215) BSC  
(2 Plcs.  
Heat Sink (Cathode)  
and Leads  
)
are Plated  
Anode  
Cathode  
2.21 (.087)  
2.59 (.102)  
Anode  
Cathode  
10.90 (.430) BSC  
Dimensions in Millimeters and (Inches)  
Dimensions in Millimeters and (Inches)  
APT30SCD120B_S  
Disclaimer:  
The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND  
CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used  
without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with  
Microsemi, then the terms of such Agreement will also apply . This document and the information contained herein may not be modied, by  
any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property  
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or  
otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an ofcer of Microsemi.  
Microsemi reserves the right to change the conguration, functionality and performance of its products at anytime without any notice. This  
product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or  
applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or  
use of Microsemi products including liability or warranties relating to tness for a particular purpose, merchantability, or infringement of any  
patent, copyright or other intellectual property right. Any performance specications believed to be reliable but are not veried and customer or  
user must conduct and complete all performance and other testing of this product as well as any user or customers nal application. User or  
customer shall not rely on any data and performance specications or parameters provided by Microsemi. It is the customer’s and user’s re-  
sponsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein  
is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi  
specically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost prot. The product is  
subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp  

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