APT35DL120HJ [MICROSEMI]
ISOTOP Fast Diode Full Bridge Power Module; ISOTOP快速二极管全桥电源模块
| 型号： | APT35DL120HJ |
| 厂家： | 
Microsemi |
| 描述： | ISOTOP Fast Diode Full Bridge Power Module |
| 文件： | 总3页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT35DL120HJ
ISOTOP®Fast Diode
Full Bridge Power Module
VRRM = 1200V
IF = 35A @ Tc = 80°C
Application
•
•
•
•
Switch mode power supplies rectifier
Induction heating
Welding equipment
High speed rectifiers
Features
•
•
•
•
•
•
•
•
Ultra fast recovery times
Soft recovery characteristics
High blocking voltage
High current
Low leakage current
Very low stray inductance
High level of integration
ISOTOP® Package (SOT-227)
+
Benefits
•
•
•
•
•
•
Outstanding performance at high frequency operation
Low losses
Low noise switching
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
-
Absolute maximum ratings
Symbol
VR
Parameter
Maximum DC reverse Voltage
Max ratings
Unit
1200
V
VRRM
Maximum Peak Repetitive Reverse Voltage
Maximum Average Forward
Current
IF(AV)
IFRM
Duty cycle = 50% TC = 80°C
35
70
A
Maximum repetitive forward current limited
by TJmax
TJ = 45°C
8.3ms
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
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APT35DL120HJ
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
1.6
1.6
2.1
VF
Diode Forward Voltage
IF = 35A
V
250
500
IRM
Maximum Reverse Leakage Current
VR = 1200V
µA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ
Max Unit
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
170
280
3.5
7
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
IF = 35A
VR = 600V
di/dt = 1500A/µs
Qrr
Err
µC
mJ
1.4
2.7
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
RthJC
RthJA
VISOL
Junction to Case Thermal resistance
Junction to Ambient
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
0.95
20
°C/W
2500
-55
V
TJ,TSTG Storage Temperature Range
TL
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
150
300
1.5
°C
Max Lead Temp for Soldering:0.063” from case for 10 sec
N.m
g
Wt
Package Weight
29.2
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
12.6 (.496)
12.8 (.504)
r = 4.0 (.157)
(2 places)
3.30 (.130)
4.57 (.180)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030)
0.85 (.033)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
Dimensions in Millimeters and (Inches)
38.0 (1.496)
38.2 (1.504)
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APT35DL120HJ
Typical Performance Curve
Forward Characteristic of diode
Energy losses vs Collector Current
70
60
50
40
30
20
10
0
5
4
3
2
1
0
VCE = 600V
V
GE = -15V
TJ = 125°C
TJ=125°C
TJ=125°C
0.5
TJ=25°C
1.5
0
10 20 30 40 50 60 70 80
IF (A)
0
1
2
2.5
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
0.9
0.7
0.8
0.6
0.4
0.2
0
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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