APT40N60JCU3 [MICROSEMI]
ISOTOP Buck chopper Super Junction MOSFET Power Module; ISOTOP降压斩波超级结MOSFET功率模块
| 型号： | APT40N60JCU3 |
| 厂家： | 
Microsemi |
| 描述： | ISOTOP Buck chopper Super Junction MOSFET Power Module |
| 文件： | 总8页 (文件大小：490K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT40N60JCU3
ISOTOP® Buck chopper
Super Junction
VDSS = 600V
RDSon = 70mΩ max @ Tj = 25°C
ID = 40A @ Tc = 25°C
D
Application
•
•
AC and DC motor control
Switched Mode Power Supplies
Features
G
•
S
-
Ultra low RDSon
-
-
-
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
•
•
•
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
A
Benefits
•
•
•
•
•
•
•
Outstanding performance at high frequency operation
Stable temperature behavior
S
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
D
ISOTOP
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
Tc = 80°C
40
30
ID
Continuous Drain Current
A
IDM
VGS
RDSon
PD
Pulsed Drain current
120
±20
70
Gate - Source Voltage
V
mΩ
W
Drain - Source ON Resistance
Maximum Power Dissipation
Tc = 25°C
Tc = 80°C
290
IAR
Avalanche current (repetitive and non repetitive)
20
1
A
EAR
Repetitive Avalanche Energy
mJ
EAS
Single Pulse Avalanche Energy
1800
30
IFAV
IFRMS
Maximum Average Forward Current
Duty cycle=0.5
A
RMS Forward Current (Square wave, 50% duty)
39
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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APT40N60JCU3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VGS = 0V,VDS = 600V Tj = 25°C
25
µA
250
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V Tj = 125°C
RDS(on) Drain – Source on Resistance
VGS(th) Gate Threshold Voltage
IGS S
VGS = 10V, ID = 20A
70
3.9
mΩ
VGS = VDS, ID = 1mA
2.1
3
V
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Ciss
Coss
Crss
Input Capacitance
7015
VGS = 0V
VDS = 25V
f = 1MHz
pF
Output Capacitance
2565
212
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Total gate Charge
259
29
111
20
30
115
10
VGS = 10V
VBus = 300V
ID = 40A
nC
Gate – Source Charge
Gate – Drain Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Resistive Switching
VGS = 15V
VBus = 380V
ID = 40A
ns
RG = 1.8Ω
Tf
Fall Time
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 40A, RG = 5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 40A, RG = 5Ω
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
670
980
µJ
µJ
1100
1206
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APT40N60JCU3
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IF = 30A
1.6
1.9
1.4
1.8
VF
Diode Forward Voltage
V
IF = 60A
IF = 30A
Tj = 125°C
Tj = 25°C
Tj = 125°C
VR = 600V
VR = 600V
VR = 200V
IF=1A,VR=30V
di/dt =100A/µs
250
500
IRM
CT
Maximum Reverse Leakage Current
Junction Capacitance
µA
pF
44
23
Reverse Recovery Time
Tj = 25°C
trr
ns
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
85
160
4
Reverse Recovery Time
IF = 30A
IRRM
Qrr
Maximum Reverse Recovery Current
A
VR = 400V
di/dt =200A/µs
8
130
700
Reverse Recovery Charge
nC
Tj = 125°C
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
70
1300
30
ns
nC
A
IF = 30A
VR = 400V
di/dt =1000A/µs
Tj = 125°C
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
CoolMos
Diode
0.43
RthJC
Junction to Case Thermal Resistance
Junction to Ambient (IGBT & Diode)
°C/W
1.21
20
RthJA
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
-55
V
TJ,TSTG Storage Temperature Range
150
300
1.5
°C
TL
Max Lead Temp for Soldering:0.063” from case for 10 sec
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
N.m
g
Wt
Package Weight
29.2
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
0.45
0.4
0.9
0.7
0.5
0.35
0.3
0.25
0.2
0.3
0.15
0.1
0.1
Single Pulse
0.01
0.05
0
0.05
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration (Seconds)
Fig 1, Maximum Effective transient thermal Impedance, Junction to case vs Pulse Duration
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APT40N60JCU3
45
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature (°C)
Figure 6, DC Drain Current vs Case Temperature
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APT40N60JCU3
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APT40N60JCU3
Typical Diode Performance Curve
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APT40N60JCU3
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APT40N60JCU3
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
r = 4.0 (.157)
(2 places)
25.4 (1.000)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
Drain
Anode
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
Source
Dimensions in Millimeters and (Inches)
Gate
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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MICROSEMI
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