APT44GA60BD30 [MICROSEMI]
High Speed PT IGBT; 高速PT IGBT
| 型号： | APT44GA60BD30 |
| 厂家： | 
Microsemi |
| 描述： | High Speed PT IGBT |
| 文件： | 总9页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT44GA60BD30
APT44GA60SD30
600V
High Speed PT IGBT
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved
APT44GA60SD30
D3PAK
through leading technology silicon design and lifetime control processes. A reduced Eoff
-
VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low
gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even
APT44GA60BD30
when switching at high frequency.
Combi (IGBT and Diode)
FEATURES
TYPICAL APPLICATIONS
• Fast switching with low EMI
• Very Low Eoff for maximum efficiency
• Ultra low Cres for improved noise immunity
• Low conduction loss
• ZVS phase shifted and other full bridge
• Half bridge
• High power PFC boost
• Welding
• Low gate charge
• UPS, solar, and other inverters
• High frequency, high efficiency industrial
• Increased intrinsic gate resistance for low EMI
• RoHS compliant
Absolute Maximum Ratings
Symbol Parameter
Ratings
Unit
Collector Emitter Voltage
600
V
Vces
IC1
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1
78
44
A
IC2
ICM
130
VGE
Gate-Emitter Voltage 2
±30
V
PD
Total Power Dissipation @ TC = 25°C
Switching Safe Operating Area @ TJ = 150°C
Operating and Storage Junction Temperature Range
337
W
SSOA
TJ, TSTG
TL
130A @ 600V
-55 to 150
°C
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
300
Static Characteristics
Symbol Parameter
T = 25°C unless otherwise specified
J
Test Conditions
Min
Typ
Max
Unit
VBR(CES)
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 1.0mA
600
TJ = 25°C
TJ = 125°C
2.0
1.9
4.5
2.5
VGE = 15V,
IC = 26A
V
VCE(on)
VGE(th)
ICES
Collector-Emitter On Voltage
Gate Emitter Threshold Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
VGE =VCE , IC = 1mA
3
6
TJ = 25°C
275
VCE = 600V,
VGE = 0V
μA
TJ = 125°C
3000
±100
IGES
VGS = ±30V
nA
Microsemi Website - http://www.microsemi.com
APT44GA60B_SD30
Dynamic Characteristics
T = 25°C unless otherwise specified
J
Symbol
Cies
Parameter
Test Conditions
Capacitance
Min
Typ
3404
358
43
Max
Unit
Input Capacitance
pF
Coes
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
VGE = 0V, VCE = 25V
f = 1MHz
Cres
Qg
Gate Charge
128
22
Qge
VGE = 15V
nC
A
VCE= 300V
Qgc
Gate- Collector Charge
44
IC = 26A
TJ = 150°C, RG = 10Ω4, VGE = 15V,
L= 100uH, VCE = 600V
Inductive Switching (25°C)
VCC = 400V
SSOA
Switching Safe Operating Area
130
td(on)
tr
td(off)
tf
Turn-On Delay Time
Current Rise Time
16
14
ns
μJ
ns
μJ
Turn-Off Delay Time
Current Fall Time
84
VGE = 15V
29
IC = 26A
RG = 4.7Ω4
Eon2
Eoff
td(on)
tr
Turn-On Switching Energy
409
258
14
6
Turn-Off Switching Energy
TJ = +25°C
Turn-On Delay Time
Current Rise Time
Inductive Switching (125°C)
15
VCC = 400V
td(off)
tf
Turn-Off Delay Time
Current Fall Time
109
99
VGE = 15V
IC = 26A
RG = 4.7Ω4
Eon2
Eoff
Turn-On Switching Energy
Turn-Off Switching Energy 6
621
474
TJ = +125°C
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
Typ
Max
Unit
RθJC
Junction to Case Thermal Resistance (IGBT)
-
-
.37
°C/W
RθJC
WT
Junction to Case Thermal Resistance (Diode)
Package Weight
0.8
-
-
5.9
g
Torque
Mounting Torque (TO-247 Package), 4-40 or M3 screw
10
in·lbf
1
2
3
4
5
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
Pulse test: Pulse Width < 380μs, duty cycle < 2%.
See Mil-Std-750 Method 3471.
RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
6
Typical Performance Curves
APT44GA60B_SD30
300
250
200
150
100
50
100
V
= 15V
GE
15V
13V
TJ= 55°C
75
50
25
TJ= 25°C
TJ= 150°C
10V
TJ= 125°C
9V
8V
7V
6V
5V
0
0
0
2
4
6
8
0
4
8
12 16
20 24 28 32
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
CE
FIGURE 1, Output Characteristics (T = 25°C)
FIGURE 2, Output Characteristics (T = 25°C)
J
J
16
14
12
10
350
300
250
200
150
100
50
250μs PULSE
TEST<0.5 % DUTY
CYCLE
I
= 26A
C
T
= 25°C
J
V
= 120V
CE
V
= 300V
CE
8
V
= 480V
CE
6
4
2
0
TJ= 25°C
TJ= -55°C
TJ= 125°C
0
0
2
4
6
8
10
12
14
0
20
40
60
GATE CHARGE (nC)
FIGURE 4, Gate charge
80 100 120
140
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
5
4
3
2
1
0
5
TJ = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
4
3
2
1
0
I
= 52A
C
I
= 52A
= 26A
C
I
= 26A
I
C
C
I
= 13A
I
= 13A
C
C
VGE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
0
25
50
75
100
125
150
6
8
10
12
14
16
V
, GATE-TO-EMITTER VOLTAGE (V)
T , Junction Temperature (°C)
GE
J
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
100
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
80
60
40
20
0
-50 -25
0
25 50 75 100 125 150
25
50
75
100
125
150
T , JUNCTION TEMPERATURE
T , Case Temperature (°C)
J
C
FIGURE 7, Threshold Voltage vs Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
Typical Performance Curves
APT44GA60B_SD30
150
125
100
75
20
15
V
= 15V
VGE =15V,TJ=125°C
GE
10
VGE =15V,TJ=25°C
50
5
VCE = 400V
VCE = 400V
RG = 4.7ꢀ
L = 100μH
25
TJ = 25°C, or 125°C
G = 4.7ꢀ
L = 100μH
R
0
0
0
10
20
30
40
50
60
0
CE
10
20
30
40
50
60
I
, COLLECTOR-TO-EMITTER CURRENT (A)
I
, COLLECTOR-TO-EMITTER CURRENT (A)
CE
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
50
40
30
20
10
160
R
G = 4.7ꢀ, L = 100μH, VCE = 400V
R
G = 4.7ꢀ, L = 100μH, VCE = 400V
140
120
100
80
TJ = 125°C, VGE = 15V
60
40
TJ = 25 or 125°C,VGE = 15V
TJ = 25°C, VGE = 15V
20
0
0
0
I
10
20
30
40
50
60
0
10
20
30
40
50
60
I
, COLLECTOR-TO-EMITTER CURRENT (A)
, COLLECTOR-TO-EMITTER CURRENT (A)
CE
CE
FIGURE 12, Current Fall Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
2000
1600
1200
800
1400
1200
1000
800
V
V
=
=
400V
+15V
V
V
=
=
400V
+15V
CE
GE
CE
GE
R
= 4.7ꢀ
R
= 4.7ꢀ
G
G
TJ = 125°C
TJ = 125°C
600
400
400
TJ = 25°C
TJ = 25°C
200
0
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I
, COLLECTOR-TO-EMITTER CURRENT (A)
I
, COLLECTOR-TO-EMITTER CURRENT (A)
CE
CE
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn-Off Energy Loss vs Collector Current
3000
2500
2000
1500
1000
500
2000
V
V
T
=
=
400V
+15V
V
V
=
=
400V
+15V
CE
GE
CE
GE
Eon2,52A
Eon2,52A
= 125°C
R
= 4.7ꢀ
J
G
1600
1200
800
Eon2,52A
Eon2,52A
Eoff,26A
Eon2,26A
Eoff,26A
Eoff,26A
400
Eoff,13A
Eon2,13A
Eoff,13A
Eon2,13A
0
0
0
25
50
75
100
125
0
10
G
20
30
40
50
R , GATE RESISTANCE (OHMS)
T , JUNCTION TEMPERATURE (°C)
J
FIGURE 15, Switching Energy Losses vs Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
Typical Performance Curves
APT44GA60B_SD30
10000
1000
100
10
Cies
1000
Coes
100
10
1
Cres
0.1
0
100
200
300
400
500
1
10
100
800
V
, COLLECTOR-TO-EMITTER VOLTAGE
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
CE
CE
FIGURE 18, Minimum Switching Safe Operating Area
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
0.40
D = 0.9
0.35
0.30
0.7
0.25
0.5
0.3
0.20
0.15
0.10
0.05
0
Note:
t
1
t
2
t
1
t
/
2
0.1
Duty Factor D =
Peak T = P
x Z
+ T
θJC C
J
DM
0.05
SINGLE PULSE
10-3
10-4
10-2
10-5
0.1
1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
APT44GA60B_SD30
10%
Gate Voltage
td(on)
T
= 125°C
J
90%
APT30DQ60
tr
Collector Current
Collector Voltage
10%
VCE
VCC
IC
5%
5%
Switching Energy
A
D.U.T.
Figure 20, Inductive Switching Test Circuit
Figure 21, Turn-on Switching Waveforms and Definitions
T
= 125°C
90%
td(off)
J
Gate Voltage
Collector Voltage
tf
10%
0
Collector Current
Switching Energy
Figure 22, Turn-off Switching Waveforms and Definitions
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
All Ratings: TC = 25°C unless otherwise specified.
APT44GA60B_SD30
Unit
30
51
IF(AV)
IF(RMS)
IFSM
Maximum Average Forward Current (TC = 117°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Amps
320
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms)
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
Min
Type
2.0
Max
Unit
IF = 30A
IF = 60A
Forward Voltage
2.4
Volts
VF
1.7
IF = 30A, TJ = 125°C
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF = 1A, diF/dt = -100A/µs ,
VR = 30V, TJ = 25°C
Reverse Recovery Time
trr
-
-
23
ns
Reverse Recovery Time
trr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
30
55
3
IF = 30A, diF/dt = -200A/µs
Reverse Recovery Charge
Qrr
nC
Amps
ns
V
R = 400V, TC = 25°C
Maximum Reverse Recovery Current
IRRM
trr
Reverse Recovery Time
175
485
6
IF = 30A, diF/dt = -200A/µs
VR = 400V, TC = 125°C
nC
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Qrr
IRRM
trr
Amps
ns
75
855
IF = 30A, diF/dt = -1000A/µs
VR = 400V, TC = 125°C
Reverse Recovery Charge
nC
Qrr
Maximum Reverse Recovery Current
-
-
Amps
22
IRRM
0.90
0.80
D = 0.9
0.70
0.60
0.7
0.50
Note:
0.5
0.40
t
1
0.30
0.3
t
2
0.20
t
1
t
/
2
Duty Factor D =
SINGLE PULSE
0.1
0.10
Peak T = P
x Z
+ T
θJC C
J
DM
0.05
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Dynamic Characteristics
T = 25°C unless otherwise specified
J
APT44GA60B_SD30
100
200
180
160
140
120
100
80
T
V
= 125°C
= 400V
J
60A
R
80
30A
T
T
= 175°C
J
60
40
20
0
= 125°C
J
15A
60
T
= -55°C
J
40
T
= 25°C
J
20
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
200
400
600
800 1000 1200
V , ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
-di /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
F
F
1200
1000
800
25
T
V
= 125°C
= 400V
T
V
= 125°C
= 400V
J
J
60A
R
R
20
15
10
5
60A
30A
30A
600
15A
400
15A
200
0
0
0
200
400
600
800 1000 1200
0
200
400
600
800 1000 1200
-di /dt, CURRENT RATE OF CHANGE (A/µs)
-di /dt, CURRENT RATE OF CHANGE (A/µs)
F
F
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 5. Reverse Recovery Current vs. Current Rate of Change
1.2
60
Duty cycle = 0.5
Q
rr
T
= 175°C
J
t
rr
1.0
50
40
30
20
t
rr
0.8
I
RRM
0.6
0.4
Q
rr
0.2
0.0
10
0
0
25
50
75
100
125
150
25
50
75
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Dynamic Parameters vs. Junction Temperature
200
180
160
140
120
100
80
60
40
20
0
1
10
100 200
V , REVERSE VOLTAGE (V)
R
Figure 8. Junction Capacitance vs. Reverse Voltage
Dynamic Characteristics
T = 25°C unless otherwise specified
J
APT44GA60B_SD30
V
r
diF/dt Adjust
+18V
0V
D.U.T.
t
Q
/
30μH
rr rr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
2
IF - Forward Conduction Current
1
4
5
diF/dt - Rate of Diode Current Change Through Zero Crossing.
IRRM - Maximum Reverse Recovery Current.
Zero
3
4
0.25 I
RRM
t
- Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
3
rr
2
line through IRRM and 0.25 IRRM passes through zero.
5
Q
- Area Under the Curve Defined by IRRM and t .
rr
rr
Figure 10, Diode Reverse Recovery Waveform and Definitions
D3PAK Package Outline
TO-247 (B) Package Outline
e3 100% Sn Plated
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
4.69 (.185)
15.95 (.628)
16.05(.632)
13.41 (.528)
13.51(.532)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15(.045)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99(.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Collector (Cathode)
Emitter (Anode)
Emitter (Anode)
Collector (Cathode)
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
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