APT45M100J_09 [MICROSEMI]
N-Channel MOSFET; N沟道MOSFET
| 型号： | APT45M100J_09 |
| 厂家： | 
Microsemi |
| 描述： | N-Channel MOSFET |
| 文件： | 总4页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT45M100J
1000V, 45A, 0.18Ω Max
N-Channel MOSFET
S
S
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
7
2
D
-2
G
T
O
S
"UL Recognized"
file # E145592
ISOTOP®
D
S
APT45M100J
Single die MOSFET
G
FEATURES
TYPICAL APPLICATIONS
• PFC and other boost converter
• Fast switching with low EMI/RFI
• Buck converter
• Low RDS(on)
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
• Inverters
Absolute Maximum Ratings
Symbol Parameter
Unit
Ratings
45
Continuous Drain Current @ TC = 25°C
ID
Continuous Drain Current @ TC = 100°C
28
A
Pulsed Drain Current 1
IDM
VGS
EAS
IAR
260
±±0
4075
±±
V
mJ
A
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
Typ
Max
960
Unit
PD
Total Power Dissipation @ TC = 25°C
W
RθJC
Junction to Case Thermal Resistance
0.1±
°C/W
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
0.11
TJ,TSTG
VIsolation
°C
V
-55
150
2500
oz
g
1.0±
29.2
WT
Package Weight
in·lbf
N·m
10
Torque
Terminals and Mounting Screws.
1.1
MicrosemiWebsite-http://www.microsemi.com
Static Characteristics
T = 25°C unless otherwise specified
J
APT45M100J
Parameter
Test Conditions
Min
Typ
Max
Unit
V
Symbol
VBR(DSS)
V
= 0V, I = 250µA
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance ±
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
1000
GS
D
ΔVBR(DSS)/ΔTJ
Reference to 25°C, I = 250µA
D
V/°C
Ω
V
1.15
0.16
4
V
= 10V, I = ±±A
D
RDS(on)
VGS(th)
0.18
5
GS
±
V
= VDS, I = 2.5mA
D
GS
ΔVGS(th)/ΔTJ
mV/°C
-10
V
= 1000V
= 0V
T = 25°C
J
100
500
DS
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
µA
nA
V
T = 125°C
J
GS
V
= ±±0V
±100
GS
Dynamic Characteristics
T = 25°C unless otherwise specified
J
Symbol
Parameter
Test Conditions
Min
Typ
75
Max
Unit
gfs
V
= 50V, I = ±±A
S
Forward Transconductance
Input Capacitance
DS
D
Ciss
Crss
Coss
18500
245
V
= 0V, V = 25V
DS
GS
Reverse Transfer Capacitance
Output Capacitance
f = 1MHz
1555
pF
4
Co(cr)
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
6±5
±25
V
= 0V, V = 0V to 667V
DS
GS
5
Co(er)
Qg
Qgs
Qgd
td(on)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
570
100
270
85
V
= 0 to 10V, I = ±±A,
GS
D
nC
ns
V
= 500V
DS
Resistive Switching
V = 667V, I = ±±A
DD
tr
td(off)
tf
75
D
R
= 2.2Ω 6 , V
= 15V
GG
285
70
G
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Continuous Source Current
(Body Diode)
D
S
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
IS
45
A
G
Pulsed Source Current
(Body Diode) 1
ISM
260
1.0
VSD
trr
I
= ±±A, T = 25°C, V
= 0V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
SD
J
GS
±
I
= ±±A
1±00
47
ns
µC
SD
Qrr
diSD/dt = 100A/µs, T = 25°C
J
I
≤ ±±A, di/dt ≤1000A/µs, V = 667V,
SD
DD
V/ns
dv/dt
Peak Recovery dv/dt
10
T = 125°C
J
1
2
±
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
Starting at TJ = 25°C, L = 7.48mH, RG = 2.2Ω, IAS = ±±A.
Pulse test: Pulse Width < ±80µs, duty cycle < 2%.
4
5
Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -5.±7E-7/VDS^2 + 9.48E-8/VDS + 1.8±E-10.
6
RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT45M100J
200
180
160
140
120
100
80
70
60
50
40
±0
20
V
= 10V
T
= 125°C
GS
J
TJ = -55°C
V
GS= 6, 7, 8 & 9V
TJ = 25°C
5V
60
40
TJ = 125°C
4.5V
10
0
20
0
TJ = 150°C
0
V
5
10
15
20
25
±0
0
0
0
5
10
15
20
25
±0
, DRAIN-TO-SOURCE VOLTAGE (V)
V
, DRAIN-TO-SOURCE VOLTAGE (V)
DS(ON)
DS
Figure 1, Output Characteristics
Figure 2, Output Characteristics
±.0
2.5
2.0
1.5
1.0
250
200
150
100
NORMALIZED TO
= 10V ±±A
VDS> ID(ON)
x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
@
GS
TJ = -55°C
TJ = 25°C
TJ = 125°C
50
0
0.5
0
-55 -25
0
25 50 75 100 125 150
1
2
±
4
5
6
7
8
T , JUNCTION TEMPERATURE (°C)
V
, GATE-TO-SOURCE VOLTAGE (V)
J
GS
Figure 3, R
vs Junction Temperature
Figure 4, Transfer Characteristics
DS(ON)
90
80
70
60
50
40
±0
20
±0,000
10,000
Ciss
TJ = -55°C
TJ = 25°C
TJ = 125°C
1000
100
10
Coss
Crss
10
0
0
10
20
±0
40
200
400
600
800
1000
I , DRAIN CURRENT (A)
V , DRAIN-TO-SOURCE VOLTAGE (V)
DS
D
Figure 5, Gain vs Drain Current
Figure 6, Capacitance vs Drain-to-Source Voltage
16
14
12
10
8
250
I
= ±±A
D
200
150
100
VDS = 200V
VDS = 500V
TJ = 25°C
6
VDS = 800V
TJ = 150°C
4
50
0
2
0
0
100 200 ±00 400 500 600 700 800
0
0.±
0.6
0.9
1.2
1.5
Q , TOTAL GATE CHARGE (nC)
V , SOURCE-TO-DRAIN VOLTAGE (V)
SD
g
Figure 7, Gate Charge vs Gate-to-Source Voltage
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
APT45M100J
±00
100
±00
100
I
I
DM
DM
1±µs
10
10
100µs
1±µs
100µs
1ms
10ms
1ms
R
ds(on)
10ms
R
T = 150°C
ds(on)
100ms
J
1
1
T
C = 25°C
DC line
100ms
DC line
Scaling for Different Case & Junction
Temperatures:
T = 125°C
J
I
D = ID(T = 25°C)*(T - TC)/125
T
C = 75°C
J
C
0.1
0.1
1
10
100
1000
1
10
100
1000
V
, DRAIN-TO-SOURCE VOLTAGE (V)
V
, DRAIN-TO-SOURCE VOLTAGE (V)
DS
DS
Figure 9, Forward Safe Operating Area
Figure 10, Maximum Forward Safe Operating Area
0.14
0.12
0.10
0.08
0.06
0.04
D = 0.9
0.7
0.5
Note:
t
1
0.±
t
2
t
= Pulse Duration
t
1
0.02
0
1
t
/
2
0.1
Duty Factor D =
Peak T = P
SINGLE PULSE
x Z
+ T
θJC C
J
DM
0.05
10-5
10-4
10-±
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
SOT-227 (ISOTOP®) Package Outline
11.8 (.46±)
12.2 (.480)
±1.5 (1.240)
±1.7 (1.248)
8.9 (.±50)
9.6 (.±78)
W=4.1 (.161)
W=4.± (.169)
H=4.8 (.187)
H=4.9 (.19±)
(4 places)
7.8 (.±07)
8.2 (.±22)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.0±0) 12.6 (.496)
0.85 (.0±±) 12.8 (.504)
±.± (.129)
±.6 (.14±)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
±0.1 (1.185)
±0.± (1.19±)
*
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
±8.0 (1.496)
±8.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,90± 5,089,4±4 5,182,2±4
5,019,522 5,262,±±6 6,50±,786 5,256,58± 4,748,10± 5,28±,202 5,2±1,474 5,4±4,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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