APT5010B2LLG [MICROSEMI]
Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TMAX-3;
| 型号： | APT5010B2LLG |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TMAX-3 晶体 晶体管 开关 脉冲 |
| 文件： | 总5页 (文件大小：2088K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT5010B2LL(G)
APT5010LLL(G)
500V 46A 0.100Ω
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
R
B2LL
POWER MOS 7 MOSFET
T-MAX™
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
TO-264
LLL
D
S
• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
G
• Lower Gate Charge, Qg
• Popular T-MAX™ or TO-264 Package
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT5010B2LL_LLL(G) UNIT
VDSS
ID
Drain-Source Voltage
500
46
Volts
Continuous Drain Current @ TC = 25°C
Amps
1
IDM
Pulsed Drain Current
184
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
Volts
±40
Watts
W/°C
520
PD
4.0
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 150
300
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
50
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
1600
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
2
Drain-Source On-State Resistance
(VGS = 10V, ID = 23A)
0.100
100
500
±100
5
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
IDSS
µA
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT5010B2LL_LLL(G)
TestConditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
4360
895
60
V
= 0V
GS
Output Capacitance
V
= 25V
pF
DS
f = 1 MHz
Reverse Transfer Capacitance
3
Total Gate Charge
V
= 10V
95
GS
V
= 250V
Qgs
Qgd
td(on)
tr
DD
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
24
nC
ns
I
= 46A @ 25°C
D
50
RESISTIVESWITCHING
11
V
= 15V
GS
15
V
= 250V
DD
I
= 46A @ 25°C
D
td(off)
25
Turn-off Delay Time
R
= 0.6Ω
G
tf
Fall Time
3
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy
545
510
845
595
V
= 333V, V = 15V
GS
DD
I
= 46A, R = 5Ω
Turn-off Switching Energy
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Turn-on Switching Energy
V
= 333V, V = 15V
GS
DD
I
= 46A, R = 5Ω
Turn-off Switching Energy
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol
MIN
TYP
MAX
Characteristic / Test Conditions
UNIT
IS
46
Continuous Source Current (Body Diode)
Amps
ISM
1
2
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
184
1.3
VSD
t rr
(VGS = 0V, IS = -46A)
Volts
ns
Reverse Recovery Time (IS = -46A, dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -46A, dlS/dt = 100A/µs)
608
Q rr
µC
11.0
dv
/
dv
5
V/ns
Peak Diode Recovery
/
dt
dt
8
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.25
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 1.51mH, R = 25Ω, Peak I = 46A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 46A
/
≤ 700A/µs
VR ≤ V
T ≤ 150°C
J
dt
S
D
DSS
6
Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.30
0.9
0.25
0.20
0.7
0.15
0.5
Note:
t
1
0.3
0.10
t
2
0.1
0.05
t
1
Duty Factor D =
/
t
2
0.05
0
SINGLEPULSE
Peak T = P
x Z + T
J
DM
θJC C
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT5010B2LL_LLL(G)
120
100
80
15 &10V
8V
RC MODEL
0.0131
Junction
temp. (°C)
7.5V
0.00266F
0.00584F
0.0796F
0.460F
7V
0.0789
0.0811
0.230
60
Power
(watts)
6.5V
40
20
0
6V
5.5V
Case temperature. (°C)
0
V
5
10
15
20
25
30
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
1.2
100
V
> I (ON) x
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
(ON)MAX.
DS
DS
D
90
80
70
60
50
40
30
20
NORMALIZED TO
1.15
V
= 10V @ 23A
GS
1.1
1.05
1.0
V
=10V
GS
V
=20V
GS
T
= +125°C
J
T
= -55°C
J
0.95
0.9
T
= +25°C
J
10
0
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
1.15
1.10
1.05
1.00
0.95
0.90
0.85
50
40
30
20
10
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
1.2
2.5
I
= 23A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
APT5010B2LL_LLL(G)
184
100
20,000
10,000
OPERATIONHERE
LIMITEDBYR (ON)
DS
C
iss
100µS
1,000
C
oss
1mS
10
100
10
10mS
T
=+25°C
C
J
C
rss
T =+150°C
SINGLEPULSE
1
16
12
1
V
10
100
500
0
V
10
20
30
40
50
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
200
I
= 46A
D
100
V
=100V
DS
T =+150°C
J
T =+25°C
J
V
=250V
DS
8
4
0
V
=400V
DS
10
1
0.3
V
0
20
40
60
80
100 120 140
0.5
0.7
0.9
1.1
1.3
1.5
Q ,TOTALGATECHARGE(nC)
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
g
SD
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
80
100
V
= 330V
DD
= 5Ω
R
T
90
80
70
60
50
40
30
20
t
G
d(off)
70
60
50
40
30
20
= 125°C
J
L = 100µH
V
= 330V
DD
= 5Ω
R
T
G
t
= 125°C
f
J
L = 100µH
t
r
t
d(on)
10
0
10
0
10
20
30
40
(A)
50
60
70
10
20
30
40
(A)
50
60
70
I
I
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
1500
1200
900
V
I
= 330V
V
= 330V
DD
= 46A
DD
= 5Ω
R
T
D
G
T
= 125°C
= 125°C
J
J
2000
1500
1000
500
0
L = 100µH
EON includes
L = 100µH
EON includes
E
E
diode reverse recovery.
off
on
diode reverse recovery.
E
on
600
300
0
E
off
10
20
30
40
(A)
50
60
70
0
5
10 15 20 25 30 35 40 45 50
I
D
R ,GATERESISTANCE(Ohms)
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT5010B2LL_LLL(G)
Gate Voltage
90%
10 %
Gate Voltage
T
= 125 C
T
= 125 C
J
J
t
t
d(off)
d(on)
t
Drain Voltage
r
Drain Current
Drain Voltage
90%
90%
t
f
5 %
5 %
10%
Drain Current
10 %
Switching Energy
Switching Energy
Figure19,Turn-offSwitchingWaveformsandDefinitions
Figure18,Turn-onSwitchingWaveformsandDefinitions
APT30DF60
VDS
ID
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2)PackageOutline
TO-264(L)PackageOutline
e1 SAC: Tin, Silver, Copper
e3 100% Sn Plated
4.69 (.185)
5.31 (.209)
4.60 (.181)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
Gate
Drain
Source
1.01 (.040)
1.40 (.055)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.21 (.087)
2.59 (.102)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
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