APT5010LFLLG [MICROSEMI]
Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN;
| 型号： | APT5010LFLLG |
| 厂家： | 
MICROSEMI CORPORATION |
| 描述： | Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN 晶体 晶体管 开关 脉冲 局域网 |
| 文件： | 总5页 (文件大小：2088K) |
| 下载： | 下载PDF数据表文档文件 |
APT5010LLC
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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61
ADPOW
APT5010LLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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46
ADPOW
APT5010LLL
POWER MOS 7 MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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19
ADPOW
APT5010LLL
Power MOS 7 is a new generation of low loss, high voltage, N-ChannelWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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16
MICROSEMI
APT5010LLLG
Power MOS 7 is a new generation of low loss, high voltage, N-ChannelWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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40
MICROSEMI
APT5010LVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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125
ADPOW
APT5010LVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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313
ADPOW
APT5010LVR
Power MOS V is a new generation of high voltage N-Channel enhancementWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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30
MICROSEMI
APT5010LVRG
Power MOS V is a new generation of high voltage N-Channel enhancementWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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20
MICROSEMI
APT5011AFN
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 49A I(D)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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20
ETC
APT5011DN
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | CHIPWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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17
ETC
APT5011JNF
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 46A I(D)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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24
ETC
APT5012
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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41
ADPOW
APT5012
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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58
ADPOW
APT5012
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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43
ADPOW
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