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元器件品牌
APT5012JNU2
[MICROSEMI]
43A, 500V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET;
元器件型号：
APT5012JNU2
生产厂家：
MICROSEMI CORPORATION
描述和应用：
43A, 500V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET
局域网 开关 脉冲 晶体管
PDF文件：
总7页 (文件大小：501K)
下载文档：
下载PDF数据表文档文件
型号参数：APT5012JNU2参数
查看货源
APT5012JNU3
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 43A I(D)
Warning
: Undefined variable $rtag in
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on line
156
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22
ETC
APT5012LNR
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 42A I(D) | TO-264AA
Warning
: Undefined variable $rtag in
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on line
156
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119
ETC
APT5012WVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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23
ADPOW
APT5012WVR
N-CHANNEL MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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18
MICROSEMI
APT5013JNF
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 42A I(D)
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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21
ETC
APT5014
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
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24
ADPOW
APT5014
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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21
ADPOW
APT5014
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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27
ADPOW
APT5014
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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12
ADPOW
APT5014B2LC
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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14
ADPOW
APT5014B2VFR
POWER MOS V FREDFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
24
ADPOW
APT5014B2VFR
POWER MOS V FREDFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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16
ADPOW
APT5014B2VFR
Power Field-Effect Transistor, 37A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
MICROSEMI
APT5014B2VFRG
Power Field-Effect Transistor, 37A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MICROSEMI
APT5014B2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
30
ADPOW
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