APT5020BNR-BUTT [MICROSEMI]
28A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247;
| 型号： | APT5020BNR-BUTT |
| 厂家： | 
MICROSEMI CORPORATION |
| 描述： | 28A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 局域网 脉冲 晶体管 |
| 文件： | 总2页 (文件大小：84K) |
| 下载： | 下载PDF数据表文档文件 |
APT5020BNR-GULLWING
28A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
MICROSEMI
APT5020BVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
274
ADPOW
APT5020BVFR
Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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2
MICROSEMI
APT5020BVFRG
Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
MICROSEMI
APT5020BVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
153
ADPOW
APT5020BVR
Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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2
MICROSEMI
APT5020BVRG
Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
MICROSEMI
APT5020DN
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | CHIPWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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21
ETC
APT5020HJN
TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 500V V(BR)DSS | 28A I(D)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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12
ETC
APT5020JN
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 28A I(D)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
9
ETC
APT5020SLC
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
15
ADPOW
APT5020SLC
Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
ADPOW
APT5020SN
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 28A I(D) | TO-263ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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14
ETC
APT5020SVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
30
ADPOW
APT5020SVFR
Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
MICROSEMI
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