APT5022BNR-GULLWING [MICROSEMI]

27A, 500V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN;
APT5022BNR-GULLWING
型号: APT5022BNR-GULLWING
厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述:

27A, 500V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

文件: 总2页 (文件大小:84K)
下载:  下载PDF数据表文档文件

APT5022JN

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 27A I(D)

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12 ETC

APT5023DN

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | CHIP

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73 ETC

APT5023DN

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 ADPOW

APT5024AVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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25 ADPOW

APT5024BFLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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42 ADPOW

APT5024BFLL

POWER MOS 7 FREDFET

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20 ADPOW

APT5024BFLL

Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN

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1 MICROSEMI

APT5024BFLL

Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

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0 ADPOW

APT5024BFLL_05

POWER MOS 7 FREDFET

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9 ADPOW

APT5024BLL

POWER MOS 7 MOSFET

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29 ADPOW

APT5024BLL

POWER MOS 7 MOSFET

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17 ADPOW

APT5024BLL

Volts:500V RDS(ON):0.24Ohms ID(cont:)22Amps|MOSFETs

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25 ETC

APT5024BLLG

Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN

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0 MICROSEMI

APT5024BVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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50 ADPOW

APT5024BVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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38 ADPOW