APT5024SFLL [MICROSEMI]
Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3;
| 型号： | APT5024SFLL |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT5024BFLL
APT5024SFLL
500V 22A 0.240Ω
BFLL
R
POWER MOS 7 FREDFET
D3PAK
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
TO-247
SFLL
D
S
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• IncreasedPowerDissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
G
•
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT5024BFLL_SFLL
UNIT
VDSS
ID
Drain-Source Voltage
500
22
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
88
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
265
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Watts
W/°C
PD
2.12
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
22
1
EAR
EAS
30
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
960
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
500
22
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 11A)
Ohms
µA
0.240
250
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
IDSS
1000
±100
5
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
APT5024BFLL_SFLL
Symbol
MIN
TYP
MAX
Characteristic
UNIT
TestConditions
Ciss
V
= 0V
Input Capacitance
1900
417
27
43
12
24
8
GS
V
= 25V
Coss
pF
Output Capacitance
DS
f = 1 MHz
Crss
Qg
Reverse Transfer Capacitance
3
V
= 10V
Total Gate Charge
GS
V
= 250V
Qgs
Qgd
td(on)
tr
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
DD
I
= 22A @ 25°C
D
RESISTIVESWITCHING
V
= 15V
GS
6
V
= 250V
DD
td(off)
18
2
Turn-off Delay Time
Fall Time
I
= 22A @ 25°C
D
tf
R
= 0.6Ω
G
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
167
86
Turn-on Switching Energy
V
= 333V, V = 15V
GS
DD
I
Turn-off Switching Energy
= 22A, R = 5Ω
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Eon
Eoff
Turn-on Switching Energy
262
99
V
= 333V V = 15V
GS
DD
Turn-off Switching Energy
I
= 22A, R = 5Ω
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
22
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
88
2
(VGS = 0V, IS = -ID 22A)
Volts
V/ns
1.3
15
dv
/
dv
5
Peak Diode Recovery
/
dt
dt
Reverse Recovery Time
(IS = -ID 22A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
250
400
trr
ns
µC
1.9
6
Reverse Recovery Charge
(IS = -ID 22A, di/dt = 100A/µs)
Qrr
15
26
Peak Recovery Current
(IS = -ID 22A, di/dt = 100A/µs)
IRRM
Amps
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.47
40
UNIT
Junction to Case
RθJC
RθJA
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
4 Starting T = +25°C, L = 3.97mH, R = 25Ω, Peak I = 22A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 27A
/
≤ 700A/µs
VR ≤ V
T ≤ 150°C
J
dt
S
D
DSS
3 See MIL-STD-750 Method 3471
6
Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.50
0.9
0.40
0.7
0.30
0.5
Note:
0.20
t
1
0.3
t
2
0.10
t
1
Duty Factor D =
/
t
2
0.1
Peak T = P
x Z + T
J
DM
θJC C
0.05
SINGLEPULSE
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT5024BFLL_SFLL
60
50
40
30
20
V
=15&10V
GS
8V
RC MODEL
7.5V
Junction
temp. ( ”C)
7V
0.205
0.264
0.00544F
0.0981F
Power
(Watts)
6.5V
6V
10
0
Case temperature
5.5V
0
5
10
15
20
25
30
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
1.7
60
NORMALIZED TO
V
> I (ON) x
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
(ON)MAX.
DS
1.6
DS
D
V
= 10V
@
11A
GS
50
40
30
1.5
1.4
1.3
1.2
1.1
V
=10V
GS
20
10
0
V
=20V
50
GS
T
= +125°C
J
T
= -55°C
J
1.0
0.9
T
= +25°C
J
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
60
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
1.15
1.10
1.05
1.00
0.95
0.90
0.85
25
20
15
10
5
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
1.2
2.5
I
= 11A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
APT5024BFLL_SFLL
89
10
10,000
5,000
OPERATIONHERE
LIMITEDBYR (ON)
DS
C
iss
1,000
100
10
100µS
1mS
C
oss
T
=+25°C
C
J
T =+150°C
SINGLEPULSE
C
rss
10mS
1
16
12
1
10
100
500
0
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
DS
DS
200
I
= 22A
D
V
=100V
DS
100
V
=250V
DS
V
=400V
DS
T =+150°C
J
8
4
0
T =+25°C
J
10
1
0
10
20
30
40
50
60
70
80
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q ,TOTALGATECHARGE(nC)
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
g
SD
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
50
40
V
= 333V
DD
= 5Ω
R
T
t
d(off)
G
= 125°C
J
40
30
20
L = 100µH
30
20
V
= 333V
DD
= 5Ω
R
T
G
= 125°C
t
J
f
L = 100µH
t
r
10
0
t
d(on)
10
0
0
10
20
(A)
30
40
0
10
20
(A)
30
40
I
I
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
500
400
300
200
500
V
= 333V
DD
= 5Ω
E
off
R
T
G
= 125°C
E
J
400
300
200
on
L = 100µH
EON includes
diode reverse recovery.
E
on
V
I
= 333V
DD
= 22A
D
T
= 125°C
E
J
off
100
0
100
0
L = 100µH
EON includes
diode reverse recovery.
0
10
20
(A)
30
40
0
5
10 15 20 25 30 35 40 45 50
R ,GATERESISTANCE(Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
I
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT
APT5024BFLL_SFLL
Gate Voltage
10 %
90%
T
= 125 C
Gate Voltage
J
T
= 125 C
J
t
d(off)
Drain Voltage
t
d(on)
Drain Current
Drain Voltage
90%
10 %
90%
t
r
t
5 %
f
5 %
10%
0
Drain Current
Switching Energy
Switching Energy
Figure18,Turn-onSwitchingWaveformsandDefinitions
Figure19,Turn-offSwitchingWaveformsandDefinitions
APT15DF60
VDS
ID
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
D3PAKPackageOutline
TO-247 Package Outline
4.69 (.185)
4.98 (.196)
15.95 (.628)
13.41 (.528)
13.51 (.532)
5.31 (.209)
5.08 (.200)
15.49 (.610)
16.26 (.640)
16.05 (.632)
1.04 (.041)
1.15 (.045)
1.49 (.059)
2.49 (.098)
1.47 (.058)
1.57 (.062)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99 (.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
相关型号：
APT5024SFLLG
Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3
MICROSEMI
APT5024SLLG
Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D3PAK-3/2
MICROSEMI
APT5024SVFRG
Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3
MICROSEMI
APT5024SVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
APT5024SVR
Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3
MICROSEMI
APT5024SVRG
Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3
MICROSEMI
APT5025BN-GULLWING
Power Field-Effect Transistor, 23A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN
ADPOW
©2020 ICPDF网 联系我们和版权申明