APT5027CLL [MICROSEMI]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | APT5027CLL |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总4页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT5027CLL
500V 16A 0.270Ω
R
POWER MOS 7 MOSFET
TO-254
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
D
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• IncreasedPowerDissipation
• Easier To Drive
G
• Hermetic TO-254 Package
S
All Ratings: T = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol Parameter
C
APT5027
500
UNIT
VDSS
ID
Drain-Source Voltage
Volts
Continuous Drain Current @ TC = 25°C
16
Amps
Volts
1
IDM
Pulsed Drain Current
64
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
180
Watts
W/°C
PD
1.43
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
16
1
EAR
EAS
30
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
960
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
500
16
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms
µA
0.27
100
500
±100
5
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT5027 CLL
MIN
TYP
MAX
UNIT
TestConditions
Ciss
Coss
Crss
Qg
InputCapacitance
1895
419
27
43
12
24
8
2300
630
50
VGS = 0V
OutputCapacitance
VDS = 25V
pF
f = 1 MHz
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
70
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
Qgs
Qgd
td(on)
tr
nC
ns
Gate-SourceCharge
Gate-Drain("Miller")Charge
Turn-onDelayTime
Rise Time
15
40
VGS = 15V
16
V
DD = 0.5 VDSS
6
12
ID = ID[Cont.] @ 25°C
td(off)
tf
Turn-offDelayTime
FallTime
18
2
27
RG = 1.6Ω
5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
MIN
TYP
MAX
16
Characteristic / Test Conditions
UNIT
Continuous Source Current (Body Diode)
Amps
1
ISM
64
Pulsed Source Current
(Body Diode)
2
VSD
t rr
Diode Forward Voltage (VGS = 0V, IS = -ID[Cont.]
)
1.3
Volts
ns
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
516
7
1000
Q rr
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
µC
dv
/
5
Peak Diode Recovery dv
/
V/ns
8
dt
dt
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.70
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
JunctiontoAmbient
1
2
3
4
5
Repetitive Rating: Pulse width limited by maximum junction
temperature.
SeeMIL-STD-750Method3471
Starting T = +25°C, L = 7.50mH, R = 25Ω, Peak I = 16A
j
G
L
dv
Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I
/
≤ 700A/µs
VR ≤ V
T ≤ 150°C
J
dt
S
D Cont.
[
DSS
]
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.70
D=0.5
0.2
0.10
0.1
0.05
0.02
0.01
Note:
0.01
t
1
SINGLEPULSE
t
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
J
DM θJC
C
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT5027 CLL
60
50
40
30
20
8V
V
=15&10V
GS
7.5V
Graph Deleted
7V
6.5V
6V
10
0
5.5V
0
4
8
12
16
20
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2,HIGHVOLTAGE OUTPUTCHARACTERISTICS
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
1.7
60
NORMALIZED TO
V
= 10V
@
0.5
I
[Cont.]
GS
D
V
> I (ON) x
DS
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
(ON)MAX.
DS
1.6
1.5
1.4
1.3
1.2
1.1
D
50
40
30
V
=10V
GS
20
10
0
V
=20V
50
GS
T
= +125°C
J
T
= -55°C
J
1.0
0.9
T
= +25°C
J
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
60
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
1.15
1.10
1.05
1.00
0.95
0.90
0.85
25
20
15
10
5
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
1.2
3.0
I
= 0.5
I
[Cont.]
D
D
V
= 10V
GS
2.5
2.0
1.5
1.0
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
Typical Performance Curves
APT5027 CLL
88
10,000
5,000
OPERATIONHERE
LIMITEDBYR (ON)
DS
100µS
C
iss
1,000
100
10
C
oss
10
1mS
T
=+25°C
C
rss
C
J
10mS
T =+150°C
SINGLEPULSE
1
16
12
1
10
100
500
.01
.1
1
10
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
200
I
= I [Cont.]
D
D
V
=100V
DS
100
V
=250V
DS
V
=400V
DS
T =+150°C
J
8
4
0
T =+25°C
J
10
1
0
10
20
30
40
50
60
70
80
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q ,TOTALGATECHARGE(nC)
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
g
SD
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
TO-254 Package Outline
13.84 (.545)
13.59 (.535)
6.91 (.272)
6.81 (.268)
1.27 (.050)
1.02 (.040)
3.78 (.149)
3.53 (.139)
Dia.
20.32 (.800)
20.06 (.790)
17.40 (.685)
16.89 (.665)
13.84 (.545)
13.59 (.535)
31.37 (1.235)
30.35 (1.195)
Drain
Source
Gate
1.14 (.045) Dia. Typ.
.89 (.035) 3 Leads
3.81 (.150) BSC
6.60 (.260)
6.32 (.249)
3.81 (.150) BSC
Dimensions in Millimeters and (Inches)
APT'sdevicesarecoveredbyoneormoreofthefollowingU.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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