APT50GT120LR [MICROSEMI]
Thunderbolt IGBT; 迅雷IGBT
| 型号： | APT50GT120LR |
| 厂家： | 
Microsemi |
| 描述： | Thunderbolt IGBT |
| 文件： | 总6页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT50GT120B2R(G)
APT50GT120LR(G)
1200V, 50A, V
= 3.2V Typical
CE(ON)
Thunderbolt IGBT®
The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using
Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior rugged-
ness and ultrafast switching speed.
Features
• Low Forward Voltage Drop
• Low Tail Current
• RBSOA and SCSOA Rated
• High Frequency Switching to 50KHz
• Ultra Low Leakage Current
• RoHS Compliant
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel
IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
Maximum Ratings
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Ratings
Unit
Symbol
VCES
VGE
Collector-Emitter Voltage
Gate-Emitter Voltage
1200
Volts
±30
94
50
IC1
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1
IC2
Amps
150
ICM
SSOA
150A @ 1200V
625
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Watts
°C
PD
TJ, TSTG
TL
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec.
-55 to 150
300
Static Electrical Characteristics
Characteristic / Test Conditions
Min
Typ
Max
Unit
Symbol
V(BR)CES
VGE(TH)
1200
-
5.5
3.2
4.0
-
-
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 3mA)
Gate Threshold Voltage (VCE = VGE, IC = 2mA, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
4.5
6.5
3.7
-
Volts
2.7
VCE(ON)
-
-
-
-
200
2.0
300
μA
mA
nA
ICES
IGES
-
-
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol Characteristic
APT50GT120B2R_LR(G)
Test Conditions
Min
Typ
3300
500
220
10.5
340
40
Max
Unit
pF
V
Cies
Coes
Cres
VGEP
Qg
Input Capacitance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
GE = 0V, VCE = 25V
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate Charge
VGE = 15V
VCE= 600V
IC = 50A
Qge
Qgc
Gate-Emitter Charge
nC
Gate-Collector Charge
210
TJ = 150°C, RG = 1.0Ω 7, VGE = 15V,
L = 100μH, VCE= 1200V
SSOA
Switching Safe Operating Area
150
A
td(on)
tr
td(off)
tf
Turn-On Delay Time
Current Rise Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
24
53
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Inductive Switching (25°C)
VCC = 800V
ns
Turn-Off Delay Time
Current Fall Time
230
26
VGE = 15V
IC = 50A
Turn-On Switching Energy 4
Eon1
Eon2
Eoff
td(on)
tr
TBD
5330
2330
24
RG = 4.7Ω
5
Turn-On Switching Energy
ꢀJ
ns
ꢀJ
TJ = +25°C
Turn-Off Switching Energy 6
Turn-On Delay Time
Current Rise Time
53
Inductive Switching (125°C)
VCC = 800V
td(off)
tf
Turn-Off Delay Time
Current Fall Time
255
48
VGE = 15V
IC = 50A
4
Eon1
Eon2
Eoff
Turn-On Switching Energy
TBD
5670
2850
RG = 4.7Ω
Turn-On Switching Energy 5
Turn-Off Switching Energy 6
TJ = 125°C
Thermal and Mechanical Characteristics
Characteristic / Test Conditions
Min
Typ
Max
Unit
°C/W
gm
Symbol
Junction to Case
Package Weight
-
-
-
-
0.20
5.9
R
θJC
WT
1
2
Repetitive Rating: Pulse width limited by maximum junction temperature.
For Combi devices, Ices includes both IGBT and FRED leakages
3
4
See MIL-STD-750 Method 3471.
Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to
the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5
Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6
7
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
RG is external gate resistance not including gate driver impedance.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
APT50GT120B2R_LR(G)
150
150
125
15V
V
= 15V
GE
13V
TJ= 25°C
TJ= 55°C
125
100
75
50
25
0
11V
10V
100
75
50
25
0
TJ= 125°C
9V
8V
TJ= 150°C
7V
6V
0
V
1
2
3
4
5
6
7
8
0
V
10
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
15
20
25
30
5
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
FIGURE 1, Output Characteristics (T = 25°C)
FIGURE 2, Output Characteristics (T = 25°C)
J
J
150
125
100
16
14
12
10
250ꢀs PULSE
TEST<0.5 % DUTY
CYCLE
I
= 50A
V
V
= 240V
= 600V
C
CE
T
= 25°C
J
CE
V
= 960V
CE
75
50
25
0
8
6
4
2
0
TJ= -55°C
TJ= 25°C
TJ= 125°C
0
2
4
6
10
12
14
0
50
100 150 200 250 300 350
GATE CHARGE (nC)
8
V
, GATE-TO-EMITTER VOLTAGE (V)
CE
FIGURE 4, Gate charge
FIGURE 3, Transfer Characteristics
6
5
4
3
2
1
0
7
TJ = 25°C.
VGE = 15V.
250ꢀs PULSE TEST
<0.5 % DUTY CYCLE
250ꢀs PULSE TEST
<0.5 % DUTY CYCLE
6
5
4
3
2
1
0
I
= 100A
C
I
= 100A
C
I
= 50A
C
I
= 50A
= 25A
C
I
= 25A
C
I
C
25
50
75
100
125
150
8
9
V
10 11 12 13 14 15 16
, GATE-TO-EMITTER VOLTAGE (V)
T , Junction Temperature (°C)
GE
J
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
1.10
100
1.05
1.00
0.95
0.90
0.85
0.80
0.75
80
60
40
20
0
-.50 -.25
0
25
50 75 100 125 150
25
50
75
100
125
150
T , JUNCTION TEMPERATURE
T , Case Temperature (°C)
J
C
FIGURE 7, Threshold Voltage vs Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
Typical Performance Curves
APT50GT120B2R_LR(G)
300
250
200
150
100
50
35
30
V
= 15V
GE
25
20
15
10
VGE =15V,TJ=125°C
VGE =15V,TJ=25°C
VCE = 800V
TJ = 25°C, or 125°C
G = 1.0ꢁ
VCE = 800V
RG = 1.0ꢁ
L = 100ꢀH
5
R
L = 100ꢀH
0
0
0
20
40
60
80
100 120
0
I
20
40
60
80
100
120
, COLLECTOR-TO-EMITTER CURRENT (A)
I
, COLLECTOR-TO-EMITTER CURRENT (A)
CE
CE
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
60
160
140
120
100
80
R
G = 1.0ꢁ, L = 100ꢀH, VCE = 800V
R
G = 1.0ꢁ, L = 100ꢀH, VCE = 800V
50
40
30
20
10
0
T
J = 125°C, VGE = 15V
60
T
J = 25°C, VGE = 15V
40
TJ = 25 or 125°C,VGE = 15V
20
0
10
30
50
70
90
110
10
I
30
50
70
90
110
, COLLECTOR-TO-EMITTER CURRENT (A)
I
, COLLECTOR-TO-EMITTER CURRENT (A)
CE
CE
FIGURE 12, Current Fall Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
6,000
5,000
4,000
3,000
2,000
1,000
0
20,000
15,000
10,000
5,000
0
V
V
=
=
800V
+15V
V
V
=
=
800V
+15V
CE
GE
CE
GE
R
= 1.0ꢁ
R
= 1.0ꢁ
G
G
T
J = 125°C
T
J = 125°C
T
J = 25°C
TJ = 25°C
10
I
30
50
70
90
110
10
I
30
50
70
90
110
, COLLECTOR-TO-EMITTER CURRENT (A)
, COLLECTOR-TO-EMITTER CURRENT (A)
CE
CE
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn-Off Energy Loss vs Collector Current
60,000
50,000
40,000
30,000
20,000
20,000
15,000
10,000
5,000
0
V
V
=
=
800V
+15V
V
V
T
=
=
800V
+15V
CE
GE
Eon2,100A
Eon2,100A
CE
GE
R
= 1.0ꢁ
= 125°C
G
J
Eon2,50A
Eoff,100A
Eoff,50A
Eoff,100A
Eon2,50A
10,000
0
Eoff,50A
Eon2,25A
Eoff,25A
Eon2,25A
Eoff,25A
0
10
20
30
40
50
0
25
50
75
100
125
R , GATE RESISTANCE (OHMS)
T , JUNCTION TEMPERATURE (°C)
G
J
FIGURE 15, Switching Energy Losses vs Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
Typical Performance Curves
APT50GT120B2R_LR(G)
160
5000
Cies
140
120
100
80
1000
100
10
60
40
Coes
Cres
20
0
0
200 400 600 800 1000 1200 1400
, COLLECTOR-TO-EMITTER VOLTAGE
0
100
200
300
400
500 600
V
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
CE
CE
FIGURE 18, Minimum Switching Safe Operating Area
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
0.25
0. 2
D = 0.9
0.7
0.5
0.3
0.15
0. 1
Note:
t
1
t
2
0.05
0
t
1
t
/
2
Duty Factor D =
0.1
SINGLE PULSE
10-3
Peak T = P
x Z
+ T
θJC C
J
DM
0.05
10-5
10-4
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
120
T
T
=
125°C
75°C
J
=
C
D = 50 %
100
V
=
800V
CE
R
= 1.0ꢁ
G
TJ (°C)
TC (°C)
80
60
40
20
0
Fmax = min (fmax, fmax2
)
0.05
0.0487
0.151
fmax1
=
75°C
Dissipated Power
(Watts)
t d(on) + tr + td(off) + tf
0.00909
0.389
Pdiss - Pcond
Eon2 + E off
fmax2
Pdiss
=
100°C
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
TJ - T C
R θJC
=
10 20 30 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (A)
C
Figure 20, Operating Frequency vs Collector Current
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
APT50GT120B2R_LR(G )
10%
Gate Voltage
T
= 125°C
J
td(on)
APT30DQ120
90%
Collector Current
Collector Voltage
tr
VCE
VCC
IC
5%
5%
10%
Switching Energy
A
D.U.T.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
90%
T
= 125°C
J
90%
Gate Voltage
td(off)
Collector Voltage
tf
10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
T-MAX® Package Outline
TO-264 Package Outline
4.69 (.185)
4.60 (.181)
5.31 (.209)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
4.50
(.177) Max.
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
0.40 (.016)
0.79 (.031)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
Gate
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Collector
Emitter
Collector
Emitter
1.01 (.040)
1.40 (.055)
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.21 (.087)
2.59 (.102)
2.59 (.102)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.00 (.118)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
相关型号：
APT50GT120LRDQ2G
Insulated Gate Bipolar Transistor, 106A I(C), 1200V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN
MICROSEMI
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