APT50GT60SRG [MICROSEMI]
Thunderbolt IGBT; 迅雷IGBT
| 型号： | APT50GT60SRG |
| 厂家： | 
Microsemi |
| 描述： | Thunderbolt IGBT |
| 文件： | 总6页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
•ꢀLowꢀTailꢀCurrentꢀ
•ꢀLowꢀForwardꢀVoltageꢀDropꢀ
•ꢀHighꢀFreq.ꢀSwitchingꢀtoꢀ100KHz
•ꢀUltraꢀLowꢀLeakageꢀCurrent
600V
APT50GT60BR
APT50GT60SR
APT50GT60BRG* APT50GT60SRG*
*GꢀDenotesꢀRoHSꢀCompliant,ꢀPbꢀFreeꢀTerminalꢀFinish.
(B)
Thunderbolt IGBT®
D3PAK
(S)
TheThunderblot IGBT® is a new generation of high voltage power IGBTs.Using Non- Punch
Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
switching speed.
C
G
E
G
C
E
C
E
•ꢀRBSOAꢀandꢀSCSOAꢀRated
G
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Parameter
Symbol
UNIT
APT50GT60BR_SR(G)
VCES
VGE
IC1
Collector-Emitter Voltage
Gate-Emitter Voltage
600
Volts
30
7
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
110
IC2
52
Amps
1
ICM
Pulsed Collector Current
150
Switching Safe Operating Area @ TJ = 150°C
150A @ 600V
446
SSOA
PD
Watts
°C
Total Power Dissipation
TJ,TSTG
Operating and Storage Junction Temperature Range
-55 to 150
300
TL
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATICꢀELECTRICALꢀCHARACTERISTICS
Symbol Characteristicꢀ/ꢀTestꢀConditions
MIN
TYP
MAX
Units
V(BR)CES
VGE(TH)
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 2mA)
Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
600
3
4
5
Volts
1.7
2.0
2.2
2.5
VCE(ON)
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)
25
ICES
IGES
µA
nA
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)
TBD
120
Gate-Emitter Leakage Current (VGE = 20V)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MicrosemiWebsite-http://www.microsemi.com
DYNAMICꢀCHARACTERISTICS
Symbol Characteristic
APT50GT60BR_SR(G)
UNIT
TestꢀConditions
Capacitance
MIN
TYP
MAX
Cies
Coes
Cres
VGEP
Qg
Input Capacitance
2660
250
153
7.5
pF
V
Output Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Gate Charge
VGE = 15V
VCE = 300V
IC = 50A
3
Total Gate Charge
240
20
Qge
Qgc
nC
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
110
TJ = 150°C, RG = 4.3Ω, VGE
=
Switching Safe Operating Area
SSOA
td(on)
A
150
15V, L = 100µH,VCE = 600V
InductiveꢀSwitchingꢀ(25°C)
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
14
32
VCC = 400V
VGE = 15V
IC = 50A
tr
ns
td(off)
240
36
tf
RG = 4.3Ω
TJ = +25°C
4
Eon1
Eon2
Turn-on Switching Energy
995
1110
1070
14
5
µJ
ns
Turn-on Switching Energy (Diode)
6
Eoff
Turn-off Switching Energy
td(on)
InductiveꢀSwitchingꢀ(125°C)
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
tr
VCC = 400V
VGE = 15V
IC = 50A
32
td(off)
tf
270
95
Current Fall Time
RG = 4.3Ω
TJ = +125°C
4 4
Eon1
Eon2
Eoff
1035
1655
1505
Turn-on Switching Energy
55
µJ
Turn-on Switching Energy (Diode)
6
Turn-off Switching Energy
THERMALꢀANDꢀMECHANICALꢀCHARACTERISTICS
Symbol Characteristic
UNIT
MIN
TYP
MAX
.28
R
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
θJC
°C/W
gm
R
N/A
θJC
WT
5.9
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction temperature.
For Combi devices, Ices includes both IGBT and FRED leakages
See MIL-STD-750 Method 3471.
Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5
Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6
7
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
Continuous current limited by package lead temperature.
Microsemiꢀreservesꢀtheꢀrightꢀtoꢀchange,ꢀwithoutꢀnotice,ꢀtheꢀspecificationsꢀandꢀinformationꢀcontainedꢀherein.
TYPICAL PERFORMANCE CURVES
APT50GT60BR_SR(G)
160
200
180
160
140
120
100
80
15V
V
= 15V
13V
11V
GE
140
120
100
80
10V
TJ = 25°C
TJ = -55°C
TJ = 125°C
9V
60
8V
60
40
40
7V
6V
10
0
20
0
0
1
2
3
4
5
0
V
5
10
, COLLECTER-TO-EMITTER VOLTAGE (V)
CE
15
20
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
CE
FIGUREꢀ1,ꢀꢀOutputꢀꢀCharacteristics(T =ꢀ25°C)ꢀ
FIGUREꢀ2,ꢀꢀOutputꢀꢀCharacteristicsꢀ(T =ꢀ125°C)
J
J
160
16
14
12
250µs PULSE
TEST<0.5 % DUTY
CYCLE
I
T
= 50A
= 25°C
C
J
140
120
100
80
TJ = -55°C
V
= 120V
CE
V
= 300V
CE
10
8
V
= 480V
CE
6
60
TJ = 25°C
TJ = 125°C
4
40
2
20
0
0
0
2
4
6
8
10
12
0
50
100
150
200
250
V
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
GE
FIGUREꢀ3,ꢀꢀTransferꢀꢀCharacteristicsꢀ
FIGUREꢀ4,ꢀGateꢀꢀCharge
3.5
3.0
2.5
2.0
1.5
1.0
5
4
3
2
1
0
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
= 100A
C
I
= 100A
= 50A
C
I
I
= 50A
C
C
I
= 25A
C
I
= 25A
C
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0.5
0
6
8
10
12
14
16
0
25
50
75
100
125
V
,ꢀGATE-TO-EMITTERꢀVOLTAGEꢀ(V)ꢀ
T ,ꢀJunctionꢀTemperatureꢀ(°C)
GE
J
FIGUREꢀ5,ꢀꢀOnꢀꢀStateꢀVoltageꢀvsꢀGate-to-ꢀEmitterꢀVoltageꢀ
FIGUREꢀ6,ꢀOnꢀStateꢀVoltageꢀvsꢀJunctionꢀTemperature
1.15
160
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
140
120
100
80
LeadTemperature
Limited
60
40
20
0
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
T ,ꢀJUNCTIONꢀTEMPERATUREꢀ(°C)ꢀ
T ,ꢀCASEꢀTEMPERATUREꢀ(°C)
J
C
FIGUREꢀ7,ꢀThresholdꢀVoltageꢀꢀvs.ꢀJunctionꢀTemperatureꢀ
FIGUREꢀ8,ꢀDCꢀCollectorꢀCurrentꢀvsꢀCaseꢀTemperature
APT50GT60BR_SR(G)
350
300
250
200
150
50
25
20
15
10
5
V
= 15V
VGE =15V,TJ=125°C
GE
VGE =15V,TJ=25°C
VCE = 400V
VCE = 400V
RG = 4.3Ω
L = 100µH
TJ = 25°C, or 125°C
RG = 4.3Ω
L = 100µH
0
I
0
0
20
40
60
80
100
120
0
20
40
60
80
100
125
I
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGUREꢀ9,ꢀTurn-OnꢀDelayꢀTimeꢀvsꢀCollectorꢀCurrentꢀ
FIGUREꢀ10,ꢀTurn-OffꢀDelayꢀTimeꢀvsꢀCollectorꢀCurrent
180
90
RG = 4.3Ω, L = 100µH, VCE = 400V
RG = 4.3Ω, L = 100µH, VCE = 400V
160
140
120
100
80
80
70
60
50
40
30
20
T
J = 125°C, VGE = 15V
60
40
T
J = 25 or 125°C,VGE = 15V
T
J = 25°C, VGE = 15V
20
10
0
0
I
0
20
40
60
80
100
120
0
20
40
60
80
100
120
I
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGUREꢀ11,ꢀꢀCurrentꢀRiseꢀTimeꢀvsꢀCollectorꢀCurrentꢀ
FIGUREꢀ12,ꢀꢀCurrentꢀFallꢀTimeꢀvsꢀCollectorꢀCurrent
5000
4000
3000
2000
1000
0
3500
3000
2500
2000
1500
1000
500
V
V
R
= 400V
= +15V
= 4.3Ω
V
V
R
= 400V
= +15V
= 4.3Ω
CE
GE
CE
GE
G
G
T
J = 125°C
T
J = 125°C
T
J = 25°C
TJ = 25°C
0
0
20
40
60
80
100
120
0
20
40
60
80
100
120
I
,ꢀCOLLECTORꢀTOꢀEMITTERꢀCURRENTꢀ(A)ꢀ
I
,ꢀCOLLECTORꢀTOꢀEMITTERꢀCURRENTꢀ(A)
CE
CE
FIGUREꢀ13,ꢀTurn-OnꢀEnergyꢀLossꢀvsꢀCollectorꢀCurrentꢀ
FIGUREꢀꢀ14,ꢀꢀTurnꢀOffꢀEnergyꢀLossꢀvsꢀCollectorꢀCurrent
10,000
8,000
6,000
4,000
5,000
V
V
T
= 400V
= +15V
= 125°C
V
V
R
= 400V
= +15V
= 4.3Ω
CE
GE
CE
GE
E
100A
on2,
E
100A
on2,
J
G
4,000
3,000
2,000
1,000
0
E
100A
off,
E
100A
off,
E
50A
50A
off,
E
50A
on2,
E
E
50A
on2,
off,
2,000
0
E
25A
E
25A
off,
on2,
E 25A
on2,
E
25A
off,
0
10
20
30
40
50
0
25
50
75
100
125
R
,ꢀGATEꢀꢀRESISTANCEꢀ(OHMS)ꢀ
T ,ꢀJUNCTIONꢀTEMPERATUREꢀ(°C)
G
J
FIGUREꢀ15,ꢀSwitchingꢀEnergyꢀLossesꢀꢀvs.ꢀGateꢀResistanceꢀ
FIGUREꢀ16,ꢀSwitchingꢀEnergyꢀLossesꢀꢀvsꢀJunctionꢀTemperature
TYPICAL PERFORMANCE CURVES
APT50GT60BR_SR(G)
160
140
120
100
80
4,000
Cies
1,000
500
60
40
Coes
Cres
20
100
0
0
10
20
30
40
50
0
100 200 300 400 500 600 700
V , COLLECTOR TO EMITTER VOLTAGE
CE
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
CE
Figureꢀ17,ꢀCapacitanceꢀꢀvsꢀꢀCollector-To-EmitterꢀꢀVoltageꢀ
Figureꢀ18,MinimimꢀSwitchingꢀSafeꢀOperatingꢀArea
0.30
D = 0.9
0.25
0.7
0.20
0.5
0.3
0.15
0.10
Note:
t
1
t
SINGLE PULSE
2
0.05
0
t
1
t
0.1
Duty Factor D =
Peak T = P x Z
/
2
+ T
C
0.05
J
DM
θJC
10-5
10-4
10-3
RECTANGULAR PULSE DURATION (SECONDS)
Figureꢀ19a,ꢀMaximumꢀEffectiveꢀTransientꢀThermalꢀImpedance,ꢀJunction-To-CaseꢀvsꢀPulseꢀDuration
10-2
10-1
1.0
TJ (°C)
TC (°C)
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
0.114
0.113
Dissipated Power
(Watts)
0.0057
0.0276
FIGUREꢀ19b,ꢀꢀTRANSIENTꢀꢀTHERMALꢀIMPEDANCEꢀꢀMODEL
120
50
Fmax = min (fmax, fmax2
)
0.05
fmax1
=
td(on) + tr + td(off) + tf
10
2
Pdiss - Pcond
Eon2 + Eoff
fmax2
=
T
T
= 125°C
= 75°C
J
C
D = 50 %
V
R
TJ - TC
RθJC
= 400V
Pdiss
=
CE
= 4.3Ω
G
10 20 30 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (A)
C
Figureꢀ20,ꢀOperatingꢀꢀFrequencyꢀꢀvsꢀCollectorꢀꢀCurrent
APT50GT60BR_SR(G)
Gate Voltage
10%
APT40DQ60
T
= 125°C
J
td(on)
tr
Collector Current
Collector Voltage
90%
VCE
IC
VCC
5%
5%
10%
A
D.U.T.
Switching Energy
Figureꢀ22,ꢀTurn-onꢀSwitchingꢀWaveformsꢀandꢀDefinitions
Figureꢀ21,ꢀInductiveꢀSwitchingꢀTestꢀCircuit
90%
Gate Voltage
T
= 125°C
J
td(off)
90%
Collector Voltage
tf
10%
0
Collector Current
Switching Energy
Figureꢀ23,ꢀTurn-offꢀSwitchingꢀWaveformsꢀandꢀDefinitions
D3PAKꢀPackageꢀOutline
TO-247 Package Outline
SAC: Tin, Silver, Copper
e1
e3
SAC: Tin, Silver, Copper
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
4.69 (.185)
15.95 (.628)
16.05(.632)
13.41 (.528)
13.51(.532)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15(.045)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99(.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
HeatꢀSinkꢀ(Collector)
andꢀLeads areꢀPlated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Collector
Emitterꢀ
Emitterꢀ
Collectorꢀ
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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