APT50M60L2VFRG [MICROSEMI]

Power Field-Effect Transistor, 77A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN;
APT50M60L2VFRG
型号: APT50M60L2VFRG
厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述:

Power Field-Effect Transistor, 77A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN

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APT50M60L2VR

POWER MOS V㈢ MOSFET

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27 MICROSEMI

APT50M60L2VR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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57 ADPOW

APT50M60L2VR_04

POWER MOS V㈢ MOSFET

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19 MICROSEMI

APT50M60L2VRG

Power Field-Effect Transistor, 77A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN

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0 MICROSEMI

APT50M65

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

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8 ADPOW

APT50M65

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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20 ADPOW

APT50M65

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

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14 ADPOW

APT50M65B2FLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

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41 ADPOW

APT50M65B2FLL

POWER MOS 7 R FREDFET

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29 ADPOW

APT50M65B2FLL_03

POWER MOS 7 R FREDFET

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16 ADPOW

APT50M65B2FLLG

Power Field-Effect Transistor, 67A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, B2, TMAX-3

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0 MICROSEMI

APT50M65B2LL

POWER MOS 7 R MOSFET

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23 ADPOW

APT50M65B2LL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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28 ADPOW

APT50M65B2LL_04

POWER MOS 7 R MOSFET

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9 ADPOW

APT50M65B2LLG

Power Field-Effect Transistor, 67A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3

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0 MICROSEMI