APT50M75LFLLG [MICROSEMI]
Power Field-Effect Transistor, 57A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN;
| 型号： | APT50M75LFLLG |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 57A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT50M75B2FLL
APT50M75LFLL
500V 57A 0.075Ω
R
B2FLL
POWER MOS 7 FREDFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
T-MAX™
TO-264
LFLL
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
D
S
G
• Popular T-MAX™ or TO-264 Package
•
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT50M75B2FLL_LFLL UNIT
VDSS
ID
Drain-Source Voltage
500
57
Volts
Continuous Drain Current @ TC = 25°C
Amps
1
IDM
Pulsed Drain Current
228
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
Volts
±40
Watts
W/°C
570
PD
4.56
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
57
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
2500
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
2
Drain-Source On-State Resistance
(VGS = 10V, ID = 28.5A)
0.075
250
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
IDSS
µA
1000
±100
5
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMICCHARACTERISTICS
APT50M75B2FLL_LFLL
Symbol
MIN
TYP
MAX
Characteristic
UNIT
TestConditions
Ciss
V
= 0V
Input Capacitance
5590
1180
85
GS
V
= 25V
Coss
Crss
Qg
pF
Output Capacitance
DS
f = 1 MHz
Reverse Transfer Capacitance
3
V
= 10V
Total Gate Charge
125
33
GS
V
= 300V
Qgs
Qgd
td(on)
tr
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
DD
I
= 57A @ 25°C
D
65
RESISTIVESWITCHING
8
V
= 15V
GS
19
V
= 300V
DD
td(off)
21
Turn-off Delay Time
Fall Time
I
= 57A @ 25°C
D
tf
R
= 0.6Ω
3
G
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
755
725
Turn-on Switching Energy
V
= 333V, V = 15V
GS
DD
I
Turn-off Switching Energy
= 57A, R = 5Ω
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Eon
Eoff
Turn-on Switching Energy
1240
845
V
= 333V V = 15V
GS
DD
Turn-off Switching Energy
I
= 57A, R = 5Ω
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
57
UNIT
Continuous Source Current (Body Diode)
IS
Amps
1
ISM
VSD
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
228
1.3
15
2
(VGS = 0V, IS = -57A)
Volts
V/ns
dv
/
dv
5
Peak Diode Recovery
/
dt
dt
Reverse Recovery Time
(IS = -57A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
280
600
trr
ns
µC
Reverse Recovery Charge
(IS = -57A, di/dt = 100A/µs)
1.9
5.7
15
Qrr
Peak Recovery Current
(IS = -57A, di/dt = 100A/µs)
IRRM
Amps
23
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.22
40
UNIT
Junction to Case
RθJC
RθJA
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
4 Starting T = +25°C, L = 1.54mH, R = 25Ω, Peak I = 57A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 57A
/
≤ 700A/µs
V
R ≤ V
T ≤ 150°C
J
dt
S
D
DSS
3 See MIL-STD-750 Method 3471
6
Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.25
0.9
0.2
0.7
0.15
0.5
0.1
Note:
t
1
0.3
t
2
0.05
t
1
Duty Factor D =
/
t
2
0.1
0.05
Peak T = P
x Z + T
θJC C
J
DM
SINGLEPULSE
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
APT50M75B2FLL_LFLL
Typical Performance Curves
120
100
8V
15 &10V
7.5V
RC MODEL
Junction
temp. (°C)
0.0144
0.0763
0.130
0.00575F
0.0186F
0.278F
7V
80
60
40
Power
(watts)
6.5V
6V
20
0
Case temperature. (°C)
5.5V
0
5
10
15
20
25
30
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGEOUTPUTCHARACTERISTICS
160
1.2
NORMALIZED TO
V
> I (ON) x
DS
R
MAX.
DS(ON)
D
V
= 10V @ I = 28.5A
GS
D
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
140
120
100
80
1.15
1.10
1.05
1.00
V
=10V
GS
60
V
=20V
GS
T
= +125°C
= +25°C
40
20
0
J
T
= -55°C
J
0.95
0.90
T
J
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4,TRANSFERCHARACTERISTICS
FIGURE5,R
vsDRAINCURRENT
DS(ON)
1.15
1.10
1.05
1.00
0.95
0.90
0.85
60
50
40
30
20
10
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
2.5
1.2
I
= 28.5A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8, R
vs. TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
DS(ON)
APT50M75B2FLL_LFLL
228
100
20,000
10,000
OPERATIONHERE
LIMITEDBYR (ON)
DS
C
iss
C
oss
1,000
100µS
10
1mS
100
10
C
rss
T
=+25°C
C
J
10mS
T =+150°C
SINGLEPULSE
10
1
1
V
100
500
0
V
10
20
30
40
50
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
16
12
200
I
= 57A
V
=100V
D
DS
100
V
=250V
DS
T =+150°C
J
V
=400V
DS
T =+25°C
J
8
4
0
10
1
0.3
0
40
g
80
120
160
200
0.6
0.9
1.2
1.5
Q ,TOTALGATECHARGE(nC)
V
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
SD
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE
100
120
V
= 333V
DD
= 5Ω
110
100
90
80
70
60
50
40
30
20
10
R
T
90
G
t
= 125°C
d(off)
J
80
70
L = 100µH
t
V
= 333V
f
DD
= 5Ω
R
T
G
60
50
40
30
20
= 125°C
J
L = 100µH
t
r
t
d(on)
10
1
10 20 30
40 50
(A)
60
70
80
90
10 20
30
40 50 60
(A)
70 80
90
I
I
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
2000
1500
1000
3500
3000
2500
2000
1500
1000
V
= 333V
V
I
= 333V
DD
= 5Ω
DD
= 57A
R
T
G
D
= 125°C
T
= 125°C
J
E
J
off
L = 100µH
L = 100µH
E
EON includes
EON includes
on
diode reverse recovery
diode reverse recovery
E
on
500
0
E
off
500
0
10 20
30
40
50
(A)
60
70
80 90
0
5
10 15 20 25 30 35 40 45 50
I
R ,GATERESISTANCE(Ohms)
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT50M75B2FLL_LFLL
90 %
Gate Voltage
Drain Current
10 %
td(on)
Gate Voltage
TJ = 125
C
TJ = 125
C
td(off)
tf
Drain Voltage
90%
90%
tr
5 %
5 %
0
Drain Voltage
Drain Current
10%
10%
Switching Energy
Switching Energy
Figure19,Turn-offSwitchingWaveformsandDefinitions
Figure18,Turn-onSwitchingWaveformsandDefinitions
APT60DF60
VDS
ID
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2)PackageOutline
TO-264(L)PackageOutline
4.69 (.185)
5.31 (.209)
4.60 (.181)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
Gate
Drain
Source
1.01 (.040)
1.40 (.055)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.21 (.087)
2.59 (.102)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
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