APT6011B2VRG [MICROSEMI]

Power Field-Effect Transistor, 49A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3;
APT6011B2VRG
元器件型号: APT6011B2VRG
生产厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述和应用:

Power Field-Effect Transistor, 49A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3

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PDF文件: 总4页 (文件大小:149K)
下载文档:  下载PDF数据表文档文件
型号参数:APT6011B2VRG参数

APT6011LVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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20 ADPOW

APT6011LVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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10 ADPOW

APT6011LVFRG

Power Field-Effect Transistor, 49A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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0 MICROSEMI

APT6011LVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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11 ADPOW

APT6011LVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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26 ADPOW

APT6013B2FLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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25 ADPOW

APT6013B2FLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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23 ADPOW

APT6013B2FLL_04

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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15 ADPOW

APT6013B2FLLG

暂无描述

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0 MICROSEMI

APT6013B2LL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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9 MICROSEMI

APT6013B2LL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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16 ADPOW

APT6013B2LL_04

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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14 MICROSEMI

APT6013B2LLG

Power Field-Effect Transistor, 43A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3

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0 MICROSEMI

APT6013B2LLG

Power Field-Effect Transistor, 43A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3

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0 MICROSEMI

APT6013JFLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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25 ADPOW