APT6035BVR [MICROSEMI]
Power Field-Effect Transistor, 18A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,;
| 型号： | APT6035BVR |
| 厂家： | 
MICROSEMI CORPORATION |
| 描述： | Power Field-Effect Transistor, 18A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 局域网 高压 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：175K) |
| 下载： | 下载PDF数据表文档文件 |
APT6035BVRG
Power Field-Effect Transistor, 18A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
MICROSEMI
APT6035CN
TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
ADPOW
APT6035SVFR
POWER MOS V FREDFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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16
ADPOW
APT6035SVFR
POWER MOS V FREDFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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12
ADPOW
APT6035SVFR
Power Field-Effect Transistor, 18A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
ADPOW
APT6035SVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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14
ADPOW
APT6035SVR
Power Field-Effect Transistor, 18A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
MICROSEMI
APT6035SVRG
Power Field-Effect Transistor, 18A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
MICROSEMI
APT6037HVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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16
ADPOW
APT6038BFLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
16
ADPOW
APT6038BFLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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11
ADPOW
APT6038BFLL_04
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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12
ADPOW
APT6038BLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
25
ADPOW
APT6038BLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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13
ADPOW
APT6038BLL
Power Field-Effect Transistor, 17A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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1
MICROSEMI
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