APT60GU30SG [MICROSEMI]

Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, D2PAK-3;
APT60GU30SG
型号: APT60GU30SG
厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述:

Insulated Gate Bipolar Transistor, 100A I(C), 300V V(BR)CES, N-Channel, D2PAK-3

栅 瞄准线 功率控制 晶体管
文件: 总6页 (文件大小:167K)
下载:  下载PDF数据表文档文件

APT60M60JFLL

POWER MOS 7 R FREDFET

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16 ADPOW

APT60M60JFLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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36 ADPOW

APT60M60JFLL

Power Field-Effect Transistor, 70A I(D), 600V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

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10 ADPOW

APT60M60JFLL_03

POWER MOS 7 R FREDFET

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13 ADPOW

APT60M60JLL

POWER MOS 7 R MOSFET

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26 ADPOW

APT60M60JLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

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27 ADPOW

APT60M60JLL_03

POWER MOS 7 R MOSFET

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12 ADPOW

APT60M75

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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23 ADPOW

APT60M75

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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12 ADPOW

APT60M75

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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14 ADPOW

APT60M75JFLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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31 ADPOW

APT60M75JFLL

POWER MOS 7 R FREDFET

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8 ADPOW

APT60M75JFLL

Power Field-Effect Transistor, 58A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4

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1 MICROSEMI

APT60M75JFLL_04

POWER MOS 7 R FREDFET

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8 ADPOW

APT60M75JLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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29 ADPOW