APT60N60BCSG [MICROSEMI]

Super Junction MOSFET; 超级结MOSFET
APT60N60BCSG
型号: APT60N60BCSG
厂家: Microsemi    Microsemi
描述:

Super Junction MOSFET
超级结MOSFET

晶体 晶体管 功率场效应晶体管
文件: 总5页 (文件大小:209K)
中文:  中文翻译
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600V 60A 0.045Ω  
APT60N60BCS  
APT60N60SCS  
APT60N60BCSG* APT60N60SCSG*  
*G Denotes RoHS Compliant, Pb Free Terminal Finish.  
Super Junction MOSFET  
(B)  
COOLMOS  
Po wer Se miconductors  
D3PAK  
• Ultra Low RDS(ON)  
(S)  
• Low Miller Capacitance  
• Ultra Low Gate Charge, Q  
• Avalanche Energy Rated  
g
D
dv  
• Extreme  
/
Rated  
dt  
G
• Popular TO-247 or Surface Mount D3 Package  
S
MAXIMUM RATINGS  
All Ratings: T = 25°C unless otherwise specied.  
C
Parameter  
Symbol  
APT60N60B_SCS(G)  
UNIT  
VDSS  
Drain-Source Voltage  
Volts  
600  
60  
Continuous Drain Current @ TC = 25°C  
ID  
Continuous Drain Current @ TC = 100°C  
Amps  
38  
1
IDM  
Pulsed Drain Current  
230  
VGS  
Gate-Source Voltage Continuous  
Volts  
Watts  
W/°C  
±30  
431  
Total Power Dissipation @ TC = 25°C  
PD  
Linear Derating Factor  
3.45  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
Lead Temperature: 0.063" from Case for 10 Sec.  
MOSFET dv/dt Ruggedness (VDS = 480V)  
-55 to 150  
260  
°C  
dv  
/
V/ns  
50  
11  
dt  
2
IAR  
EAR  
EAS  
Avalanche Current  
Amps  
2
Repetitive Avalanche Energy  
3
mJ  
3
1950  
Single Pulse Avalanche Energy  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
UNIT  
V(BR)DSS  
RDS(on)  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)  
Volts  
600  
4
Drain-Source On-State Resistance  
(VGS = 10V, ID = 44A)  
0.045 Ohms  
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)  
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)  
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)  
Gate Threshold Voltage (VDS = VGS, ID = 3mA)  
25  
IDSS  
μA  
250  
IGSS  
nA  
±100  
3.9  
VGS(th)  
2.1  
3
Volts  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
"COOLMOS™ comprise a new family of transistors developed by Inneon Technologies AG. "COOLMOS" is a trade-  
mark of Inneon Technologies AG."  
Microsemi Website - http://www.microsemi.com  
APT60N60B_SCS(G)  
DYNAMIC CHARACTERISTICS  
Symbol  
Ciss  
MIN  
TYP  
MAX  
Characteristic  
UNIT  
Test Conditions  
Input Capacitance  
V
= 0V  
7200  
8500  
290  
150  
34  
GS  
Coss  
Crss  
V
= 25V  
pF  
Output Capacitance  
DS  
f = 1 MHz  
Reverse Transfer Capacitance  
Qg  
5
190  
V
= 10V  
Total Gate Charge  
GS  
Qgs  
Qgd  
td(on)  
tr  
V
= 400V  
nC  
ns  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time  
Rise Time  
DD  
I
= 44A @ 25°C  
D
50  
RESISTIVE SWITCHING  
30  
V
= 15V  
GS  
20  
V
= 400V  
DD  
td(off)  
100  
10  
Turn-off Delay Time  
Fall Time  
I
= 44A @ 25°C  
D
tf  
R
= 4.3Ω  
G
INDUCTIVE SWITCHING @ 25°C  
Eon  
Eoff  
6
675  
520  
Turn-on Switching Energy  
V
= 400V, V = 15V  
DD  
GS  
I
= 44A, R = 4.3Ω  
Turn-off Switching Energy  
D
G
μJ  
INDUCTIVE SWITCHING @ 125°C  
= 400V, V = 15V  
6
Eon  
Eoff  
1100  
635  
Turn-on Switching Energy  
V
DD  
GS  
I
= 44A, R = 4.3Ω  
G
Turn-off Switching Energy  
D
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS  
Symbol  
Characteristic / Test Conditions  
UNIT  
MIN  
TYP  
MAX  
IS  
Continuous Source Current (Body Diode)  
44  
180  
1.2  
Amps  
1
ISM  
VSD  
t rr  
Pulsed Source Current  
Diode Forward Voltage  
(Body Diode)  
4
(VGS = 0V, IS = -44A)  
Volts  
ns  
Reverse Recovery Time (IS = -44A, dlS/dt = 100A/μs)  
600  
17  
Q rr  
Reverse Recovery Charge (IS = -44A, dlS/dt = 100A/μs)  
μC  
dv  
Peak Diode Recovery dv  
/
4
7
/
V/ns  
dt  
dt  
THERMAL CHARACTERISTICS  
Symbol Characteristic  
UNIT  
MIN  
TYP  
MAX  
0.29  
40  
RθJC  
RθJA  
Junction to Case  
°C/W  
Junction to Ambient  
5 See MIL-STD-750 Method 3471  
6 Eon includes diode reverse recovery. See gures 18, 20.  
1 Repetitive Rating: Pulse width limited by maximum junction  
temperature  
7 We do not recommend using this CoolMOS™ product in topologies  
that have fee wheeling load current conducted in the body diode that is  
hard commutated. The current commutation is very "snappy", resulting in  
high di/dt at the completion of commutation, and the likelihood of severe  
over-voltage transients due to the resulting high dv/dt.  
2 Repetitive avalanche causes additional power losses that can  
be calculated as PAV = E *f  
AR  
3 Starting T = +25°C, L = 33.23mH, R = 25Ω, Peak I = 11A  
j
G
L
4 Pulse Test: Pulse width < 380μs, Duty Cycle < 2%  
Microsemi Reserves the right to change, without notice, the specications and information contained herein.  
0.30  
D = 0.9  
0.25  
0.7  
0.20  
0.5  
0.15  
Note:  
t
0.10  
0.3  
1
t
2
0.05  
t
1
t
/
2
Duty Factor D =  
Peak T = P x Z  
0.1  
SINGLE PULSE  
10-3  
+ T  
C
J
DM  
θJC  
0.05  
0
10-5  
10-4  
10-2  
10-1  
1.0  
RECTANGULAR PULSE DURATION (SECONDS)  
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION  
Typical Performance Curves  
APT60N60B_SCS(G)  
140  
120  
100  
80  
15, 10 & 7V  
6.5V  
6V  
5.5V  
60  
40  
5V  
4.5V  
20  
0
0
V
5
10  
15  
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
DS  
FIGURE 2, LOW VOLTAGE OUTPUT CHARACTERISTICS  
200  
1.40  
NORMALIZED TO  
VDS> ID(ON)  
x RDS(ON) MAX.  
180  
160  
140  
120  
100  
80  
250μSEC. PULSE TEST  
V
= 10V  
@
44A  
GS  
@ <0.5 % DUTY CYCLE  
1.30  
1.20  
1.10  
1.00  
VGS=10V  
TJ = -55°C  
TJ = +25°C  
TJ = +125°C  
60  
VGS=20V  
40  
0.90  
0.80  
20  
0
0
V
1
2
3
4
5
6
7
8
0
20  
40  
60  
80  
100 120 140  
, GATE-TO-SOURCE VOLTAGE (VOLTS)  
I , DRAIN CURRENT (AMPERES)  
GS  
D
FIGURE 3, TRANSFER CHARACTERISTICS  
FIGURE 4, R (ON) vs DRAIN CURRENT  
DS  
60  
50  
40  
30  
20  
10  
0
1.15  
1.10  
1.05  
1.00  
0.95  
0.90  
25  
50  
75  
100  
125  
150  
-50 -25  
0
25 50 75 100 125 150  
T , CASE TEMPERATURE (°C)  
T , JUNCTION TEMPERATURE (°C)  
C
J
FIGURE 5, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE  
FIGURE 6, BREAKDOWN VOLTAGE vs TEMPERATURE  
2.5  
1.15  
I
= 44A  
= 10V  
D
V
1.10  
1.05  
1.00  
0.95  
0.90  
0.85  
0.80  
0.75  
0.70  
GS  
2.0  
1.5  
1.0  
0.5  
0
-50 -25  
0
25 50  
75 100 125 150  
-50 -25  
0
25 50 75 100 125 150  
T , JUNCTION TEMPERATURE (°C)  
T , CASE TEMPERATURE (°C)  
J
C
FIGURE 7, ON-RESISTANCE vs. TEMPERATURE  
FIGURE 8, THRESHOLD VOLTAGE vs TEMPERATURE  
APT60N60B_SCS(G)  
100,000  
10,000  
1,000  
230  
OPERATION HERE  
LIMITED BY R (ON)  
DS  
100  
50  
Ciss  
Coss  
100μS  
10  
5
Crss  
100  
0
TC =+25°C  
TJ =+150°C  
SINGLE PULSE  
1mS  
10mS  
1
0
V
10  
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
DS  
20  
30  
40  
50  
1
V
10  
100  
600  
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
DS  
FIGURE 9, MAXIMUM SAFE OPERATING AREA  
FIGURE 10, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE  
16  
14  
12  
10  
8
200  
I
= 44A  
D
100  
TJ =+150°C  
VDS=120V  
VDS=300V  
TJ =+25°C  
10  
6
VDS=480V  
4
2
0
1
0
50  
100  
150  
200  
250  
0.3  
V
0.5  
0.7  
0.9  
1.1  
1.3  
1.5  
Q , TOTAL GATE CHARGE (nC)  
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)  
g
SD  
FIGURE 11, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE  
FIGURE 12, SOURCE-DRAIN DIODE FORWARD VOLTAGE  
250  
110  
V
= 400V  
= 4.3W  
DD  
100  
90  
80  
70  
60  
50  
40  
30  
20  
R
G
T
= 125°C  
200  
J
L = 100μH  
td(off)  
tf  
150  
V
= 400V  
= 4.3W  
DD  
R
G
T
= 125°C  
J
L = 100μH  
100  
50  
0
tr  
td(on)  
10  
0
0
20  
40  
(A)  
60  
80  
0
20  
40  
(A)  
60  
80  
I
I
D
D
FIGURE 13, DELAY TIMES vs CURRENT  
FIGURE 14, RISE AND FALL TIMES vs CURRENT  
2500  
2000  
1500  
1000  
V
= 400V  
= 4.3W  
DD  
R
G
T
= 125°C  
J
2000  
1500  
1000  
L = 100μH  
Eoff  
E
includes  
on  
diode reverse recovery.  
Eon  
Eon  
V
I
= 400V  
DD  
Eoff  
= 44A  
D
500  
0
T
= 125°C  
500  
0
J
L = 100μH  
includes  
E
on  
diode reverse recovery.  
0
20  
40  
(A)  
60  
80  
0
5
10 15 20 25 30 35 40 45 50  
I
R , GATE RESISTANCE (Ohms)  
D
G
FIGURE 15, SWITCHING ENERGY vs CURRENT  
FIGURE 16, SWITCHING ENERGY VS. GATE RESISTANCE  
APT60N60B_SCS(G)  
90%  
10%  
Gate Voltage  
Gate Voltage  
Drain Current  
T 125°C  
J
T 125°C  
J
td(on)  
td(off)  
tf  
tr  
Drain Voltage  
90%  
90%  
5%  
10%  
0
Drain Voltage  
10%  
Drain Current  
Switching Energy  
Switching Energy  
Figure 18, Turn-off Switching Waveforms and Denitions  
Figure 17, Turn-on Switching Waveforms and Denitions  
APT60DQ60  
V
V
I
DS  
DD  
D
G
D.U.T.  
Figure 19, Inductive Switching Test Circuit  
D3PAK Package Outline  
TO-247 Package Outline  
e1 SAC: Tin, Silver, Copper  
e3 100% Sn  
4.98 (.196)  
5.08 (.200)  
1.47 (.058)  
1.57 (.062)  
4.69 (.185)  
5.31 (.209)  
15.95 (.628)  
16.05(.632)  
13.41 (.528)  
13.51(.532)  
15.49 (.610)  
16.26 (.640)  
1.04 (.041)  
1.15(.045)  
1.49 (.059)  
2.49 (.098)  
5.38 (.212)  
6.20 (.244)  
6.15 (.242) BSC  
Revised  
8/29/97  
11.51 (.453)  
11.61 (.457)  
13.79 (.543)  
13.99(.551)  
20.80 (.819)  
21.46 (.845)  
3.50 (.138)  
3.81 (.150)  
0.46 (.018)  
0.56 (.022)  
{3 Plcs}  
1.27 (.050)  
1.40 (.055)  
0.020 (.001)  
0.178 (.007)  
2.67 (.105)  
2.84 (.112)  
2.87 (.113)  
3.12 (.123)  
3.81 (.150)  
4.50 (.177) Max.  
1.98 (.078)  
2.08 (.082)  
4.06 (.160)  
(Base of Lead)  
1.65 (.065)  
2.13 (.084)  
1.22 (.048)  
1.32 (.052)  
0.40 (.016)  
0.79 (.031)  
19.81 (.780)  
20.32 (.800)  
Heat Sink (Drain)  
and Leads  
are Plated  
5.45 (.215) BSC  
{2 Plcs.  
1.01 (.040)  
1.40 (.055)  
Gate  
Drai n  
Source  
}
Source  
Drai n  
Gate  
Dimensions in Millimeters (Inches)  
2.21 (.087)  
2.59 (.102)  
5.45 (.215) BSC  
2-Plcs.  
Dimensions in Millimeters and (Inches  
)

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